Solar cell structure incorporating a novel single crystal silicon material
Abstract
A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.
- Inventors:
-
- Princeton, NJ
- Trenton, NJ
- Issue Date:
- Research Org.:
- RCA CORP
- OSTI Identifier:
- 864609
- Patent Number(s):
- 4392011
- Assignee:
- RCA Corporation (New York, NY)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC03-78ET21074
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- solar; cell; structure; incorporating; novel; single; crystal; silicon; material; hydrogen; rich; band; gap; energy; fabricated; forming; amorphous; region; graded; crystallinity; crystalline; thereafter; contacting; atomic; followed; pulsed; laser; annealing; sufficient; power; duration; recrystallize; out-gassing; fabricate; semiconductor; devices; cells; surface; window; regions; silicon material; gap energy; atomic hydrogen; laser annealing; thereafter contacting; cell structure; single crystalline; band gap; solar cell; solar cells; pulsed laser; silicon solar; single crystal; semiconductor device; semiconductor devices; crystalline silicon; hydrogen rich; crystal silicon; sufficient power; sufficient duration; surface window; rich single; novel hydrogen; graded crystallinity; amorphous region; /136/252/257/428/
Citation Formats
Pankove, Jacques I, and Wu, Chung P. Solar cell structure incorporating a novel single crystal silicon material. United States: N. p., 1983.
Web.
Pankove, Jacques I, & Wu, Chung P. Solar cell structure incorporating a novel single crystal silicon material. United States.
Pankove, Jacques I, and Wu, Chung P. Sat .
"Solar cell structure incorporating a novel single crystal silicon material". United States. https://www.osti.gov/servlets/purl/864609.
@article{osti_864609,
title = {Solar cell structure incorporating a novel single crystal silicon material},
author = {Pankove, Jacques I and Wu, Chung P},
abstractNote = {A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 1983},
month = {Sat Jan 01 00:00:00 EST 1983}
}
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