Thin film photovoltaic device
Abstract
A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.
- Inventors:
-
- Wilmington, DE
- Issue Date:
- Research Org.:
- Solar Energy Research Institute
- OSTI Identifier:
- 864283
- Patent Number(s):
- 4342879
- Assignee:
- University of Delaware (Newark, DE)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EG-77-C-01-4042
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- film; photovoltaic; device; solar; cell; utilizes; zinc; phosphide; semiconductor; homojunction; type; comprising; n-type; conductivity; region; forming; electrical; junction; p-type; regions; consisting; essentially; material; formed; treating; extrinsic; dopant; magnesium; multilayer; substrate; opaque; contact; various; transparent; contacts; including; metal; chemical; composition; conductive; oxides; grids; zinc phosphide; n-type dopant; metal film; chemical composition; conductive oxide; consisting essentially; solar cell; semiconductor material; photovoltaic device; film photovoltaic; p-type region; photovoltaic solar; n-type region; metal grids; multilayer substrate; type dopant; type comprising; region forming; metal grid; electrical junction; /136/257/420/438/
Citation Formats
Catalano, Anthony W, and Bhushan, Manjul. Thin film photovoltaic device. United States: N. p., 1982.
Web.
Catalano, Anthony W, & Bhushan, Manjul. Thin film photovoltaic device. United States.
Catalano, Anthony W, and Bhushan, Manjul. Fri .
"Thin film photovoltaic device". United States. https://www.osti.gov/servlets/purl/864283.
@article{osti_864283,
title = {Thin film photovoltaic device},
author = {Catalano, Anthony W and Bhushan, Manjul},
abstractNote = {A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1982},
month = {Fri Jan 01 00:00:00 EST 1982}
}
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