Process for thin film deposition of cadmium sulfide

Muruska, H Paul; Sansregret, Joseph L; Young, Archie R

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Title: Process for thin film deposition of cadmium sulfide

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Abstract

The present invention teaches a process for depositing layers of cadmium sulfide. The process includes depositing a layer of cadmium oxide by spray pyrolysis of a cadmium salt in an aqueous or organic solvent. The oxide film is then converted into cadmium sulfide by thermal ion exchange of the O.sup.-2 for S.sup.-2 by annealing the oxide layer in gaseous sulfur at elevated temperatures.

Inventors:

Muruska, H Paul ^[1]; Sansregret, Joseph L ^[2]; Young, Archie R ^[3]

East Windsor, NJ
Scotch Plains, NJ
Montclair, NJ

Issue Date:: Fri Jan 01 00:00:00 EST 1982

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

OSTI Identifier:: 864220

Patent Number(s):: 4331707

Assignee:: Exxon Research & Engineering Co. (Florham Park, NJ)

Patent Classifications (CPCs):: C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01G - COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01G - COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
C01G11/02 - Sulfides

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C18/1204 - {inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds}
C23C18/1245 - {Inorganic substrates other than metallic}
C23C18/1258 - {Spray pyrolysis}
C23C18/1279 - {performed under reactive atmosphere, e.g. oxidising or reducing atmospheres}
C23C18/1291 - {by heating of the substrate}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1828 - {the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/543 - Solar cells from Group II-VI materials

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DOE Contract Number:: EG-77-C-01-4042

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: process; film; deposition; cadmium; sulfide; teaches; depositing; layers; layer; oxide; spray; pyrolysis; salt; aqueous; organic; solvent; converted; thermal; exchange; -2; annealing; gaseous; sulfur; elevated; temperatures; film deposition; elevated temperatures; organic solvent; elevated temperature; oxide layer; oxide film; cadmium sulfide; spray pyrolysis; cadmium oxide; depositing layers; /438/136/427/

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                    Muruska, H Paul, Sansregret, Joseph L, and Young, Archie R. Process for thin film deposition of cadmium sulfide.  United States: N. p., 1982. 
        Web.

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                    Muruska, H Paul, Sansregret, Joseph L, & Young, Archie R. Process for thin film deposition of cadmium sulfide.  United States.

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                    Muruska, H Paul, Sansregret, Joseph L, and Young, Archie R. Fri .  
        "Process for thin film deposition of cadmium sulfide".  United States.  https://www.osti.gov/servlets/purl/864220.

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@article{osti_864220,

  title        = {Process for thin film deposition of cadmium sulfide},

  author       = {Muruska, H Paul and Sansregret, Joseph L and Young, Archie R},

  abstractNote = {The present invention teaches a process for depositing layers of cadmium sulfide. The process includes depositing a layer of cadmium oxide by spray pyrolysis of a cadmium salt in an aqueous or organic solvent. The oxide film is then converted into cadmium sulfide by thermal ion exchange of the O.sup.-2 for S.sup.-2 by annealing the oxide layer in gaseous sulfur at elevated temperatures.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Fri Jan 01 00:00:00 EST 1982},

  month        = {Fri Jan 01 00:00:00 EST 1982}

}

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