Method for measuring the drift mobility in doped semiconductors
Abstract
A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.
- Inventors:
-
- Princeton, NJ
- Issue Date:
- Research Org.:
- RCA Corp
- OSTI Identifier:
- 864151
- Patent Number(s):
- 4319187
- Assignee:
- RCA Corporation (New York, NY)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- AC03-78ET21074
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; measuring; drift; mobility; doped; semiconductors; majority; carriers; consists; current; transient; schottky-barrier; device; following; termination; forward; bias; pulse; example; amorphous; silicon; hydrogenated; material; phosphorous; particularly; useful; dielectric; relaxation; time; shorter; carrier; transit; solar; cells; material useful; transit time; amorphous silicon; solar cell; particularly useful; solar cells; material doped; hydrogenated material; relaxation time; drift mobility; majority carriers; /324/136/
Citation Formats
Crandall, Richard S. Method for measuring the drift mobility in doped semiconductors. United States: N. p., 1982.
Web.
Crandall, Richard S. Method for measuring the drift mobility in doped semiconductors. United States.
Crandall, Richard S. Fri .
"Method for measuring the drift mobility in doped semiconductors". United States. https://www.osti.gov/servlets/purl/864151.
@article{osti_864151,
title = {Method for measuring the drift mobility in doped semiconductors},
author = {Crandall, Richard S},
abstractNote = {A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1982},
month = {Fri Jan 01 00:00:00 EST 1982}
}
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