Photon detector system
Abstract
A photon detector includes a semiconductor device, such as a Schottky barrier diode, which has an avalanche breakdown characteristic. The diode is cooled to cryogenic temperatures to eliminate thermally generated charge carriers from the device. The diode is then biased to a voltage level exceeding the avalanche breakdown threshold level such that, upon receipt of a photon, avalanche breakdown occurs. This breakdown is detected by appropriate circuitry which thereafter reduces the diode bias potential to a level below the avalanche breakdown threshold level to terminate the avalanche condition. Subsequently, the bias potential is reapplied to the diode in preparation for detection of a subsequently received photon.
- Inventors:
-
- Lexington, KY
- Issue Date:
- Research Org.:
- Battelle Memorial Institute, Columbus, OH (United States)
- OSTI Identifier:
- 864062
- Patent Number(s):
- 4303861
- Assignee:
- Battelle Development Corporation (Columbus, OH)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC06-76RL01830
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- photon; detector; semiconductor; device; schottky; barrier; diode; avalanche; breakdown; characteristic; cooled; cryogenic; temperatures; eliminate; thermally; generated; charge; carriers; biased; voltage; level; exceeding; threshold; receipt; occurs; detected; appropriate; circuitry; thereafter; reduces; bias; potential; below; terminate; condition; subsequently; reapplied; preparation; detection; received; bias potential; charge carrier; cryogenic temperature; cryogenic temperatures; charge carriers; threshold level; schottky barrier; semiconductor device; voltage level; photon detector; generated charge; /250/
Citation Formats
Ekstrom, Philip A. Photon detector system. United States: N. p., 1981.
Web.
Ekstrom, Philip A. Photon detector system. United States.
Ekstrom, Philip A. Thu .
"Photon detector system". United States. https://www.osti.gov/servlets/purl/864062.
@article{osti_864062,
title = {Photon detector system},
author = {Ekstrom, Philip A},
abstractNote = {A photon detector includes a semiconductor device, such as a Schottky barrier diode, which has an avalanche breakdown characteristic. The diode is cooled to cryogenic temperatures to eliminate thermally generated charge carriers from the device. The diode is then biased to a voltage level exceeding the avalanche breakdown threshold level such that, upon receipt of a photon, avalanche breakdown occurs. This breakdown is detected by appropriate circuitry which thereafter reduces the diode bias potential to a level below the avalanche breakdown threshold level to terminate the avalanche condition. Subsequently, the bias potential is reapplied to the diode in preparation for detection of a subsequently received photon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1981},
month = {Thu Jan 01 00:00:00 EST 1981}
}
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