Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide
Abstract
In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.
- Inventors:
-
- Morris Plains, NJ
- New Providence, NJ
- Issue Date:
- Research Org.:
- Exxon Research and Engineering Co., Linden, N.J. (USA)
- OSTI Identifier:
- 863463
- Patent Number(s):
- 4177093
- Assignee:
- Exxon Research & Engineering Co. (Florham Park, NJ)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- EY-76-C-03-1283
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; fabricating; conducting; oxide-silicon; solar; cells; utilizing; electron; beam; sublimation; deposition; oxide; preparing; indium; heterojunction; subsequent; silicon; engineering; efficiency; resultant; cell; enhanced; depositing; predetermined; favorable; angle; incidence; typically; 40; degree; 70; preferably; 55; 65; deposited; government; united; america; rights; pursuant; department; energy; contract; ey-76-c-03-1283; cells utilizing; conducting oxide; subsequent deposition; heterojunction solar; solar cell; electron beam; solar cells; silicon solar; energy contract; junction solar; oxide deposited; oxide-silicon heterojunction; beam sublimation; /438/136/257/423/427/
Citation Formats
Feng, Tom, and Ghosh, Amal K. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide. United States: N. p., 1979.
Web.
Feng, Tom, & Ghosh, Amal K. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide. United States.
Feng, Tom, and Ghosh, Amal K. Mon .
"Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide". United States. https://www.osti.gov/servlets/purl/863463.
@article{osti_863463,
title = {Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide},
author = {Feng, Tom and Ghosh, Amal K},
abstractNote = {In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1979},
month = {Mon Jan 01 00:00:00 EST 1979}
}
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