DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thin film tritium dosimetry

Abstract

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

Inventors:
 [1]
  1. Madison, WI
Issue Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States)
OSTI Identifier:
862521
Patent Number(s):
3955085
Assignee:
United States of America as represented by United States Energy (Washington, DC)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
DOE Contract Number:  
AT(11-1)-1105
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
film; tritium; dosimetry; provides; method; dosimeter; comprising; material; relatively; sensitive; ritac-ritap; properties; exposed; radiation; removed; source; energy; electron; dose; deposited; determined; radiation-induced; thermally-activated; polarization; techniques; energy electron; dosimeter comprising; tritium dosimetry; /250/

Citation Formats

Moran, Paul R. Thin film tritium dosimetry. United States: N. p., 1976. Web.
Moran, Paul R. Thin film tritium dosimetry. United States.
Moran, Paul R. Thu . "Thin film tritium dosimetry". United States. https://www.osti.gov/servlets/purl/862521.
@article{osti_862521,
title = {Thin film tritium dosimetry},
author = {Moran, Paul R},
abstractNote = {The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1976},
month = {Thu Jan 01 00:00:00 EST 1976}
}