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Title: Process for producing organic products containing silicon, hydrogen, nitrogen, and carbon by the direct reaction between elemental silicon and organic amines and products formed thereby

Abstract

A process is disclosed for producing, at a low temperature, a high purity organic reaction product consisting essentially of silicon, hydrogen, nitrogen, and carbon. The process comprises reacting together a particulate elemental high purity silicon with a high purity reactive amine reactant in a liquid state at a temperature of from about O/degree/C up to about 300/degree/C. A high purity silicon carbide/silicon nitride ceramic product can be formed from this intermediate product, if desired, by heating the intermediate product at a temperature of from about 1200-1700/degree/C for a period from about 15 minutes up to about 2 hours or the organic reaction product may be employed in other chemical uses.

Inventors:
;
Issue Date:
Research Org.:
Rockwell International Corp., Canoga Park, CA (United States)
OSTI Identifier:
6163400
Patent Number(s):
7177270
Application Number:
ON: DE89010101
Assignee:
US Dept. of Energy
Patent Classifications (CPCs):
G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING
H - ELECTRICITY H04 - ELECTRIC COMMUNICATION TECHNIQUE H04L - TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
DOE Contract Number:  
FG03-85ER45221
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; HYDROGEN COMPOUNDS; CHEMICAL PREPARATION; ORGANIC NITROGEN COMPOUNDS; ORGANIC SILICON COMPOUNDS; SILICON CARBIDES; SILICON NITRIDES; AMINES; CARBON; INVENTIONS; REACTION INTERMEDIATES; SILICON; CARBIDES; CARBON COMPOUNDS; ELEMENTS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; ORGANIC COMPOUNDS; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS; SYNTHESIS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360601 - Other Materials- Preparation & Manufacture; 400201 - Chemical & Physicochemical Properties

Citation Formats

Pugar, E. A., and Morgan, P. E.D. Process for producing organic products containing silicon, hydrogen, nitrogen, and carbon by the direct reaction between elemental silicon and organic amines and products formed thereby. United States: N. p., 1988. Web.
Pugar, E. A., & Morgan, P. E.D. Process for producing organic products containing silicon, hydrogen, nitrogen, and carbon by the direct reaction between elemental silicon and organic amines and products formed thereby. United States.
Pugar, E. A., and Morgan, P. E.D. Mon . "Process for producing organic products containing silicon, hydrogen, nitrogen, and carbon by the direct reaction between elemental silicon and organic amines and products formed thereby". United States. https://www.osti.gov/servlets/purl/6163400.
@article{osti_6163400,
title = {Process for producing organic products containing silicon, hydrogen, nitrogen, and carbon by the direct reaction between elemental silicon and organic amines and products formed thereby},
author = {Pugar, E. A. and Morgan, P. E.D.},
abstractNote = {A process is disclosed for producing, at a low temperature, a high purity organic reaction product consisting essentially of silicon, hydrogen, nitrogen, and carbon. The process comprises reacting together a particulate elemental high purity silicon with a high purity reactive amine reactant in a liquid state at a temperature of from about O/degree/C up to about 300/degree/C. A high purity silicon carbide/silicon nitride ceramic product can be formed from this intermediate product, if desired, by heating the intermediate product at a temperature of from about 1200-1700/degree/C for a period from about 15 minutes up to about 2 hours or the organic reaction product may be employed in other chemical uses.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Apr 04 00:00:00 EDT 1988},
month = {Mon Apr 04 00:00:00 EDT 1988}
}