Title: High work function MoO2 back contacts for improved solar cell performance

Abstract

Improved high work function back contacts for solar cells are provided. In one aspect, a method of forming a solar cell includes: forming a completed solar cell having a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a metal grid disposed on the transparent front contact; removing the substrate and the electrically conductive material using exfoliation, exposing a backside surface of the solar cell; depositing a high work function material onto the back side surface of the solar cell; and depositing a back contact onto the high work function material. A solar cell formed by the present techniques is also provided. Yield of the exfoliated device can be improved by removing bubbles from adhesive used for exfoliation and/or forming contact pads to access the metal grid.

Inventors:

Antunez, Priscilla D.; Bishop, Douglas M.; Fraczak, Gloria W.; Gunawan, Oki; Haight, Richard A.

Issue Date:

Tue May 18 00:00:00 EDT 2021

Research Org.:

International Business Machines Corp., Armonk, NY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1823976

Patent Number(s):

11011661

Application Number:

16/741,577

Assignee:

International Business Machines Corporation (Armonk, NY)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/022425 - {for solar cells}
H01L31/02245 - {for metallisation wrap-through [MWT] type solar cells}
H01L31/0326 - {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
H01L31/072 - the potential barriers being only of the PN heterojunction type
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L31/1892 - {methods involving the use of temporary, removable substrates}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/50 - Photovoltaic [PV] energy

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Show less

DOE Contract Number:  

EE0006334

Resource Type:

Patent

Resource Relation:

Patent File Date: 01/13/2020

Country of Publication:

United States

Language:

English