Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties
Abstract
An optoelectronic memristor includes a first electrode, a second electrode, and a solid electrolyte in between that is in electrical communication with the first electrode and the second electrode. The solid electrolyte has an electronic conductivity of about 10−10 Siemens/cm to about 10−4 Siemens/cm at room temperature. The first electrode, and optionally the second electrode, can be optically transparent at a specific wavelength and/or a wavelength range. A direct current (DC) voltage source is employed to apply an electric field across the solid electrolyte, which induces a spatial redistribution of ionic defects in the solid electrolyte. In turn, this causes a change in electrical resistance of the solid electrolyte. The application of the electric field can also cause a change in an optical property of the solid electrolyte at the specific wavelength, and/or at the wavelength range (or a portion thereof).
- Inventors:
- Issue Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1805477
- Patent Number(s):
- 10910559
- Application Number:
- 16/427,597
- Assignee:
- Massachusetts Institute of Technology (Cambridge, MA)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING
- DOE Contract Number:
- SC0002633
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 05/31/2019
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Defferriere, Thomas, Kalaev, Dmitri, Tuller, Harry L., and Rupp, Jennifer Lilia. Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties. United States: N. p., 2021.
Web.
Defferriere, Thomas, Kalaev, Dmitri, Tuller, Harry L., & Rupp, Jennifer Lilia. Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties. United States.
Defferriere, Thomas, Kalaev, Dmitri, Tuller, Harry L., and Rupp, Jennifer Lilia. Tue .
"Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties". United States. https://www.osti.gov/servlets/purl/1805477.
@article{osti_1805477,
title = {Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties},
author = {Defferriere, Thomas and Kalaev, Dmitri and Tuller, Harry L. and Rupp, Jennifer Lilia},
abstractNote = {An optoelectronic memristor includes a first electrode, a second electrode, and a solid electrolyte in between that is in electrical communication with the first electrode and the second electrode. The solid electrolyte has an electronic conductivity of about 10−10 Siemens/cm to about 10−4 Siemens/cm at room temperature. The first electrode, and optionally the second electrode, can be optically transparent at a specific wavelength and/or a wavelength range. A direct current (DC) voltage source is employed to apply an electric field across the solid electrolyte, which induces a spatial redistribution of ionic defects in the solid electrolyte. In turn, this causes a change in electrical resistance of the solid electrolyte. The application of the electric field can also cause a change in an optical property of the solid electrolyte at the specific wavelength, and/or at the wavelength range (or a portion thereof).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 02 00:00:00 EST 2021},
month = {Tue Feb 02 00:00:00 EST 2021}
}
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