Title: Optoelectronic devices based on thin single-crystalline semiconductor films and non-epitaxial optical cavities

Abstract

Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.

Inventors:

Ma, Zhenqiang; Xia, Zhenyang; Gan, Qiaoqiang; Song, Haomin; Yu, Zongfu; Zhou, Ming

Issue Date:

Tue Sep 15 00:00:00 EDT 2020

Research Org.:

Univ. of Wisconsin, Madison, WI (United States); State Univ. of New York (SUNY), Amherst, NY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1735275

Patent Number(s):

10777700

Application Number:

15/612,187

Assignee:

Wisconsin Alumni Research Foundation (Madison, WI); The Research Foundation of State University of New York (Amherst, NY)

Patent Classifications (CPCs):

G - PHYSICS G01 - MEASURING G01J - MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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G - PHYSICS G01 - MEASURING G01J - MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT

G01J1/0209 - {Monolithic}
G01J1/0488 - {with spectral filtering}
G01J1/42 - using electric radiation detectors
G01J2001/0481 - {Preset integrating sphere or cavity}
G01J2003/1213 - {Filters in general, e.g. dichroic, band}
G01J3/0259 - {Monolithic}
G01J3/2803 - {using photoelectric array detector}
G01J3/42 - Absorption spectrometry

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L27/1443 - {with at least one potential jump or surface barrier}
H01L31/02327 - {the optical elements being integrated or being directly associated to the device, e.g. back reflectors
H01L31/028 - including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L31/0296 - including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L31/0304 - including, apart from doping materials or other impurities, only AIIIBV compounds
H01L31/032 - including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
H01L31/1136 - {the device being a metal-insulator-semiconductor field-effect transistor}
H01L31/1808 - {including only Ge}

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DOE Contract Number:  

NA0002915

Resource Type:

Patent

Resource Relation:

Patent File Date: 06/02/2017

Country of Publication:

United States

Language:

English

Subject:

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING