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Title: Rapid synthesis of gallium alloys

Abstract

The ability to generate complex gallium alloys using metal amides, Ga(NR2)3 and M(NR2)n, is easily accomplished by heating the two metal amides in predetermined ratios. The product can be isolated as GaxMy where x and y can vary.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1735069
Patent Number(s):
10724120
Application Number:
16/107,814
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C22 - METALLURGY C22B - PRODUCTION AND REFINING OF METALS
C - CHEMISTRY C22 - METALLURGY C22C - ALLOYS
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 08/21/2018
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Boyle, Timothy J., and Treadwell, LaRico Juan. Rapid synthesis of gallium alloys. United States: N. p., 2020. Web.
Boyle, Timothy J., & Treadwell, LaRico Juan. Rapid synthesis of gallium alloys. United States.
Boyle, Timothy J., and Treadwell, LaRico Juan. Tue . "Rapid synthesis of gallium alloys". United States. https://www.osti.gov/servlets/purl/1735069.
@article{osti_1735069,
title = {Rapid synthesis of gallium alloys},
author = {Boyle, Timothy J. and Treadwell, LaRico Juan},
abstractNote = {The ability to generate complex gallium alloys using metal amides, Ga(NR2)3 and M(NR2)n, is easily accomplished by heating the two metal amides in predetermined ratios. The product can be isolated as GaxMy where x and y can vary.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 28 00:00:00 EDT 2020},
month = {Tue Jul 28 00:00:00 EDT 2020}
}

Works referenced in this record:

Synthesis and use of colloidal III-V nanoparticles
patent-application, September 2010


Metal Doped Semiconductor Nanocrystals And Methods of Making The Same
patent-application, October 2012