Method for lithograghic patterning of sensitive materials
Abstract
Methods for patterning highly sensitive materials, such as organic materials, organic semiconductors, biomolecular materials, and the like, with photolithographic resolution are disclosed. In some embodiments, a germanium mask (304) is formed on the surface of the sensitive material (302), thereby protecting it from subsequent processes that employ harsh chemicals that would otherwise destroy the sensitive material (302). A microlithography mask (306) is patterned on the germanium mask layer (304), after which the germanium exposed by the microlithography mask (306) is removed by dissolving it in water. After transferring the pattern of the germanium mask (304) into the sensitive material (302), the germanium and microlithography masks (304, 306) are completely removed by immersing the substrate in water, which dissolves the remaining germanium and lifts off the microlithography mask material. As a result, the only chemical to which the sensitive material (302) is exposed during the patterning process is water, thereby mitigating or avoiding damage to the material (302).
- Inventors:
- Issue Date:
- Research Org.:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1632641
- Patent Number(s):
- 10581003
- Application Number:
- 16/329,947
- Assignee:
- The Board of Trustees of the Leland Stanford Junior University (Stanford, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-76SF00515
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 09/01/2017
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Melosh, Nicholas Alexander, Angle, Matt R., Hanna, Mina-elraheb S., and Kong, Yifan. Method for lithograghic patterning of sensitive materials. United States: N. p., 2020.
Web.
Melosh, Nicholas Alexander, Angle, Matt R., Hanna, Mina-elraheb S., & Kong, Yifan. Method for lithograghic patterning of sensitive materials. United States.
Melosh, Nicholas Alexander, Angle, Matt R., Hanna, Mina-elraheb S., and Kong, Yifan. Tue .
"Method for lithograghic patterning of sensitive materials". United States. https://www.osti.gov/servlets/purl/1632641.
@article{osti_1632641,
title = {Method for lithograghic patterning of sensitive materials},
author = {Melosh, Nicholas Alexander and Angle, Matt R. and Hanna, Mina-elraheb S. and Kong, Yifan},
abstractNote = {Methods for patterning highly sensitive materials, such as organic materials, organic semiconductors, biomolecular materials, and the like, with photolithographic resolution are disclosed. In some embodiments, a germanium mask (304) is formed on the surface of the sensitive material (302), thereby protecting it from subsequent processes that employ harsh chemicals that would otherwise destroy the sensitive material (302). A microlithography mask (306) is patterned on the germanium mask layer (304), after which the germanium exposed by the microlithography mask (306) is removed by dissolving it in water. After transferring the pattern of the germanium mask (304) into the sensitive material (302), the germanium and microlithography masks (304, 306) are completely removed by immersing the substrate in water, which dissolves the remaining germanium and lifts off the microlithography mask material. As a result, the only chemical to which the sensitive material (302) is exposed during the patterning process is water, thereby mitigating or avoiding damage to the material (302).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 03 00:00:00 EST 2020},
month = {Tue Mar 03 00:00:00 EST 2020}
}
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