Title: Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer

Abstract

Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.

Inventors:

Youtsey, Christopher; McCarthy, Robert Fabian; Reddy, Rekha

Issue Date:

Tue Dec 31 00:00:00 EST 2019

Research Org.:

MicroLink Devices, Inc., Niles, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1600452

Patent Number(s):

10522363

Application Number:

16/044,479

Assignee:

MicroLink Devices, Inc. (Niles, IL)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02389 - {Nitrides}
H01L21/02458 - {Nitrides}
H01L21/0254 - {Nitrides}
H01L21/02664 - {Aftertreatments
H01L21/30612 - {Etching of AIIIBV compounds}
H01L21/30635 - {of AIIIBV compounds}
H01L21/67075 - {for wet etching}
H01L21/67086 - {with the semiconductor substrates being dipped in baths or vessels}
H01L21/78 - with subsequent division of the substrate into plural individual devices
H01L21/7813 - {leaving a reusable substrate, e.g. epitaxial lift off}
H01L29/2003 - {Nitride compounds}
H01L31/02363 - {of the semiconductor body itself, e.g. textured active layers}
H01L33/0075 - {comprising nitride compounds}
H01L33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers

Show less

DOE Contract Number:  

AR0000446

Resource Type:

Patent

Resource Relation:

Patent File Date: 07/24/2018

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY