Localized electron beam induced deposition of silicon carbide
Abstract
A method for produce a silicon-carbide film by admitting a gaseous silicon-carbide precursor into a vacuum chamber containing a substrate and directing an electron beam into the vacuum chamber onto to the surface of the substrate. The electron beam dissociates the gaseous silicon-carbide precursor at the surface of the substrate creating non-volatile fragments that bind to the substrate surface forming a silicon-carbide film.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1576421
- Patent Number(s):
- 10395923
- Application Number:
- 15/729,853
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2017 Oct 11
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Martin, Aiden Alexander. Localized electron beam induced deposition of silicon carbide. United States: N. p., 2019.
Web.
Martin, Aiden Alexander. Localized electron beam induced deposition of silicon carbide. United States.
Martin, Aiden Alexander. Tue .
"Localized electron beam induced deposition of silicon carbide". United States. https://www.osti.gov/servlets/purl/1576421.
@article{osti_1576421,
title = {Localized electron beam induced deposition of silicon carbide},
author = {Martin, Aiden Alexander},
abstractNote = {A method for produce a silicon-carbide film by admitting a gaseous silicon-carbide precursor into a vacuum chamber containing a substrate and directing an electron beam into the vacuum chamber onto to the surface of the substrate. The electron beam dissociates the gaseous silicon-carbide precursor at the surface of the substrate creating non-volatile fragments that bind to the substrate surface forming a silicon-carbide film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 27 00:00:00 EDT 2019},
month = {Tue Aug 27 00:00:00 EDT 2019}
}
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Works referenced in this record:
Charged Particle Beam Processing Using Process Gas and Cooled Surface
patent-application, October 2016
- Martin, Aiden; McCredie, Geoff; Toth, Milos
- US Patent Application 14/674558; 20160293380
Process for the deposition of diamond films using low energy, mass-selected ion beam deposition
patent, December 1994
- Rabalais, John W.; Kasi, Srinandan R.
- US Patent Document 5,374,318
Method of manufacturing passive elements using conductive polypyrrole formulations
patent, September 1999
- Murphy, Oliver J.; Hitchens, G. Duncan; Hodko, Dalibor
- US Patent Document 5,948,232
Electron beam-induced etching
patent, September 2015
- Martin, Aiden; Toth, Milos
- US Patent Document 9,123,506
Method for combined treatment of an object with an ion beam and a magnetron plasma with a combined magnetron-plasma and ion-beam source
patent, November 2000
- Maishev, Yuri; Ritter, James; Velikov, Leonid
- US Patent Document 6,153,067
Ion beam process for deposition of highly abrasion-resistant coatings
patent, April 1996
- Knapp, Bradley J.; Kimock, Fred M.; Petrmichl, Rudolph Hugo
- US Patent Document 5,508,368
Apparatus and Methods for Deposition of Silicon Carbide and Silicon Carbonitride Films
patent-application, May 2012
- Weidman, Timothy W.; Schroeder, Todd
- US Patent Application 13/288157; 20120122302