Direct synthesis of reduced graphene oxide films on dielectric substrates
Abstract
A method for coating a dielectric substrate with a R-GO film includes positioning the dielectric substrate in a chamber which is purged with a first gas to adjust a pressure of the chamber to a first pressure. A second gas at a second flow rate and a third gas at a third flow rate is inserted into the chamber to increase the chamber pressure to a second pressure greater than the first pressure. A chamber temperature is increased to a first temperature. The flow of the second gas and the third gas is stopped. The chamber is purged to a third pressure higher than the first pressure and lower than the second pressure. The pressure of the chamber is set at a fourth pressure greater than the first pressure and the third pressure. A fourth gas is inserted into the chamber at a fourth flow rate for a first time.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568594
- Patent Number(s):
- 10351429
- Application Number:
- 14/711,335
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC02-06CH11357; W-31-109-ENG-38
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 05/13/2015
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Sumant, Anirudha V., and Gulotty, Richard. Direct synthesis of reduced graphene oxide films on dielectric substrates. United States: N. p., 2019.
Web.
Sumant, Anirudha V., & Gulotty, Richard. Direct synthesis of reduced graphene oxide films on dielectric substrates. United States.
Sumant, Anirudha V., and Gulotty, Richard. Tue .
"Direct synthesis of reduced graphene oxide films on dielectric substrates". United States. https://www.osti.gov/servlets/purl/1568594.
@article{osti_1568594,
title = {Direct synthesis of reduced graphene oxide films on dielectric substrates},
author = {Sumant, Anirudha V. and Gulotty, Richard},
abstractNote = {A method for coating a dielectric substrate with a R-GO film includes positioning the dielectric substrate in a chamber which is purged with a first gas to adjust a pressure of the chamber to a first pressure. A second gas at a second flow rate and a third gas at a third flow rate is inserted into the chamber to increase the chamber pressure to a second pressure greater than the first pressure. A chamber temperature is increased to a first temperature. The flow of the second gas and the third gas is stopped. The chamber is purged to a third pressure higher than the first pressure and lower than the second pressure. The pressure of the chamber is set at a fourth pressure greater than the first pressure and the third pressure. A fourth gas is inserted into the chamber at a fourth flow rate for a first time.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 16 00:00:00 EDT 2019},
month = {Tue Jul 16 00:00:00 EDT 2019}
}
Works referenced in this record:
Chemical Modulation of Electronic and Magnetic Properties of Graphene
patent-application, March 2011
- Haddon, Robert C.; Itkis, Mikhail E.; Ramesh, Palanisamy
- US Patent Application 12/994678; 20110068290
Direct growth of graphene films on non-catalyst surfaces
patent-application, May 2014
- Tour, James; Yan, Zheng; Peng, Zhiwei
- US Patent Application 14/113856; 20140120270