Title: Group-III nitride devices and systems on IBAD-textured substrates

Abstract

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use ofmore » external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology. « less

Inventors:

Matias, Vladimir

Issue Date:

Tue Mar 26 00:00:00 EDT 2019

Research Org.:

iBeam Materials, Inc., Santa Fe, NM (United States)

Sponsoring Org.:

USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:

1568125

Patent Number(s):

10243105

Application Number:

15/675,598

Assignee:

iBeam Materials, Inc. (Santa Fe, NM)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02425 - {Conductive materials, e.g. metallic silicides}
H01L21/02458 - {Nitrides}
H01L21/02488 - {Insulating materials}
H01L21/02505 - {consisting of more than two layers}
H01L21/02516 - {Crystal orientation}
H01L21/0254 - {Nitrides}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L31/036 - characterised by their crystalline structure or particular orientation of the crystalline planes
H01L33/007 - {comprising nitride compounds}
H01L33/12 - with a stress relaxation structure, e.g. buffer layer
H01L33/18 - within the light emitting region
H01L33/32 - containing nitrogen
H01L33/60 - Reflective elements
H01L33/644 - {in intimate contact or integrated with parts of the device other than the semiconductor body}

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DOE Contract Number:  

AR0000447

Resource Type:

Patent

Resource Relation:

Patent File Date: 08/11/2017

Country of Publication:

United States

Language:

English