Error-correction coding for hot-swapping semiconductor devices
Abstract
A memory read operation is directed at a group of semiconductor devices from which a first semiconductor device has been removed. An error in data for the memory read operation is detected based on error-correction coding (ECC). The error is caused at least in part by the first semiconductor device having been removed. ECC is used to determine corrected data for the memory read operation.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531955
- Patent Number(s):
- 9484113
- Application Number:
- 14/253,638
- Assignee:
- Advanced Micro Devices, Inc. (Sunnyvale, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014-04-15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 97 MATHEMATICS AND COMPUTING
Citation Formats
Roberts, David A. Error-correction coding for hot-swapping semiconductor devices. United States: N. p., 2016.
Web.
Roberts, David A. Error-correction coding for hot-swapping semiconductor devices. United States.
Roberts, David A. Tue .
"Error-correction coding for hot-swapping semiconductor devices". United States. https://www.osti.gov/servlets/purl/1531955.
@article{osti_1531955,
title = {Error-correction coding for hot-swapping semiconductor devices},
author = {Roberts, David A.},
abstractNote = {A memory read operation is directed at a group of semiconductor devices from which a first semiconductor device has been removed. An error in data for the memory read operation is detected based on error-correction coding (ECC). The error is caused at least in part by the first semiconductor device having been removed. ECC is used to determine corrected data for the memory read operation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 01 00:00:00 EDT 2016},
month = {Tue Nov 01 00:00:00 EDT 2016}
}
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