Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture
Abstract
A silicon carbide based MOS integrated circuit is monolithically integrated with a suspended piezoelectric aluminum nitride member to form a high-temperature-capable hybrid MEMS-over-MOS structure. In the integrated structure, a post-MOS passivation layer of silicon carbide is deposited over the MOS passivation and overlain by a structural layer of the MEMS device. Electrical contact to refractory metal conductors of the MOS integrated circuit is provided by tungsten vias that are formed so as to pass vertically through the structural layer and the post-MOS passivation layer.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1525005
- Patent Number(s):
- 10214415
- Application Number:
- 15/910,531
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81B - MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- DOE Contract Number:
- NA0003525
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2018-03-02
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Griffin, Benjamin, Habermehl, Scott D., and Clews, Peggy J. Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture. United States: N. p., 2019.
Web.
Griffin, Benjamin, Habermehl, Scott D., & Clews, Peggy J. Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture. United States.
Griffin, Benjamin, Habermehl, Scott D., and Clews, Peggy J. Tue .
"Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture". United States. https://www.osti.gov/servlets/purl/1525005.
@article{osti_1525005,
title = {Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture},
author = {Griffin, Benjamin and Habermehl, Scott D. and Clews, Peggy J.},
abstractNote = {A silicon carbide based MOS integrated circuit is monolithically integrated with a suspended piezoelectric aluminum nitride member to form a high-temperature-capable hybrid MEMS-over-MOS structure. In the integrated structure, a post-MOS passivation layer of silicon carbide is deposited over the MOS passivation and overlain by a structural layer of the MEMS device. Electrical contact to refractory metal conductors of the MOS integrated circuit is provided by tungsten vias that are formed so as to pass vertically through the structural layer and the post-MOS passivation layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 26 00:00:00 EST 2019},
month = {Tue Feb 26 00:00:00 EST 2019}
}
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Works referenced in this record:
Methods for dry etching semiconductor devices
patent, November 2016
- Bauer, Todd; Gross, Andrew John; Clews, Peggy J.
- US Patent Document 9,484,216
Methods of depositing an alpha-silicon-carbide-containing film at low temperature
patent, January 2017
- Habermehl, Scott D.
- US Patent Document 9,546,420
Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated Circuits
journal, January 2016
- Spry, David J.; Neudeck, Philip G.; Chen, Liang-Yu
- Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT), Vol. 2016, Issue HiTEC
SiC-AlN-composition-based MEMS
conference, November 1999
- Luchinin, Victor V.; Korlyakov, Andrey V.; Vasilev, A. A.
- Indo-Russian Workshop on Micromechanical Systems, SPIE Proceedings
Formation of stress-controlled, highly textured, α-SiC thin films at 950 °C
journal, July 2012
- Habermehl, S.; Rodriguez, M.; Simmons, B.
- Journal of Applied Physics, Vol. 112, Issue 1, Article No. 013535
Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect
journal, May 2016
- Spry, David J.; Neudeck, Philip G.; Chen, Liang Yu
- Materials Science Forum, Vol. 858
Method for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices using a flat surface above a sacrificial layer
patent, October 2017
- Cheng, Chun-Wen; Chu, Chia-Hua
- US Patent Document 9,796,582
Method for fabricating a microelectromechanical resonator
patent, February 2013
- Wojciechowski, Kenneth; Olsson, Roy H.
- US Patent Document 8,367,305
Development of an aluminum nitride-silicon carbide material set for high-temperature sensor applications
conference, June 2014
- Griffin, Benjamin A.; Habermehl, Scott D.; Clews, Peggy J.
- SPIE Sensing Technology + Applications, SPIE Proceedings
Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect
journal, May 2016
- Spry, David J.; Neudeck, Philip G.; Chen, Liangyu
- IEEE Electron Device Letters, Vol. 37, Issue 5
Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C
journal, August 2017
- Neudeck, Philip G.; Spry, David J.; Chen, Liangyu
- IEEE Electron Device Letters, Vol. 38, Issue 8