Title: Methods of growing CdTe-based materials at high rates

Abstract

Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of greater than 1 .mu.m/min. Each of the first CdTe-based layer and the CdTe-based template has a single-crystal structure and/or a large-grain polycrystalline structure. The depositing is performed by physical vapor deposition.

Inventors:

Burst, James M.; Albin, David S.; Colegrove, Eric; Reese, Matthew O.; Moutinho, Helio R.; Metzger, Wyatt K.; Duenow, Joel N.

Issue Date:

Tue Nov 20 00:00:00 EST 2018

Research Org.:

National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1494136

Patent Number(s):

10134590

Application Number:

15/470,195

Assignee:

Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Classifications (CPCs):

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C14/0629 - {of zinc, cadmium or mercury}
C23C14/24 - Vacuum evaporation

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B23/025 - {characterised by the substrate}
C30B29/48 - AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02433 - {Crystal orientation}
H01L21/0248 - {Tellurides}
H01L21/02502 - {consisting of two layers}
H01L21/02562 - {Tellurides}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/0257 - {Doping during depositing}
H01L21/02581 - {Transition metal or rare earth elements}
H01L21/02631 - {Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}

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DOE Contract Number:  

AC36-08GO28308

Resource Type:

Patent

Resource Relation:

Patent File Date: 2017 Mar 27

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE