Achieving band gap grading of CZTS and CZTSe materials

Gershon, Talia S.; Haight, Richard A.; Hopstaken, Marinus; Lee, Yun Seog

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Title: Achieving band gap grading of CZTS and CZTSe materials

Abstract

Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.

Inventors:: Gershon, Talia S.; Haight, Richard A.; Hopstaken, Marinus; Lee, Yun Seog

Issue Date:: Tue Nov 20 00:00:00 EST 2018

Research Org.:: International Business Machines Corp., Armonk, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1494133

Patent Number(s):: 10134929

Application Number:: 14/883,300

Assignee:: International Business Machines Corporation (Armonk, NY)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/0245 - {Silicon, silicon germanium, germanium}
H01L21/02474 - {Sulfides}
H01L21/02477 - {Selenides}
H01L21/02485 - {Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/0251 - {Graded layers}
H01L21/02557 - {Sulfides}
H01L21/0256 - {Selenides}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02573 - {Conductivity type}
H01L21/02664 - {Aftertreatments
H01L31/0326 - {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/065 - the potential barriers being only of the graded gap type
H01L31/072 - the potential barriers being only of the PN heterojunction type
H01L31/1864 - {Annealing}
H01L31/1892 - {methods involving the use of temporary, removable substrates}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: EE0006334

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015 Oct 14

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, and Lee, Yun Seog. Achieving band gap grading of CZTS and CZTSe materials.  United States: N. p., 2018. 
        Web.

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                    Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, & Lee, Yun Seog. Achieving band gap grading of CZTS and CZTSe materials.  United States.

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                    Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, and Lee, Yun Seog. Tue .  
        "Achieving band gap grading of CZTS and CZTSe materials".  United States.  https://www.osti.gov/servlets/purl/1494133.

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@article{osti_1494133,

  title        = {Achieving band gap grading of CZTS and CZTSe materials},

  author       = {Gershon, Talia S. and Haight, Richard A. and Hopstaken, Marinus and Lee, Yun Seog},

  abstractNote = {Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Nov 20 00:00:00 EST 2018},

  month        = {Tue Nov 20 00:00:00 EST 2018}

}

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Works referenced in this record:

GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
patent, September 2009

Kouvetakis, John; Bauer, Matthew; Menendez, Jose
US Patent Document 7,589,003
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7589003

Cu $_{2}$ Zn(Sn,Ge)Se $_{4}$ and Cu $_{2}$ Zn(Sn,Si)Se $_{4}$ alloys as photovoltaic materials: Structural and electronic properties
journal, March 2013

Shu, Qiang; Yang, Ji-Hui; Chen, Shiyou
Physical Review B, Vol. 87, Issue 11, Article No. 115208
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Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation
journal, April 2014

Shin, Byungha; Zhu, Yu; Gershon, Talia
Thin Solid Films, Vol. 556
https://doi.org/10.1016/j.tsf.2013.12.046

A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors
journal, March 2001

Dullweber, T.; anna, G. H.; Rau, U.
Solar Energy Materials and Solar Cells, Vol. 67, Issue 1-4
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Enhancing the performance of CZTSSe solar cells with Ge alloying
journal, October 2012

Guo, Qijie; Ford, Grayson M.; Yang, Wei-Chang
Solar Energy Materials and Solar Cells, Vol. 105
https://doi.org/10.1016/j.solmat.2012.05.039

Hydrazine-Processed Ge-Substituted CZTSe Solar Cells
journal, November 2012

Bag, Santanu; Gunawan, Oki; Gokmen, Tayfun
Chemistry of Materials, Vol. 24, Issue 23
https://doi.org/10.1021/cm302881g

Crystal chemistry and optical investigations of the Cu₂Zn(Sn,Si)S₄ series for photovoltaic applications
journal, December 2014

Hamdi, Mohamed; Lafond, Alain; Guillot-Deudon, Catherine
Journal of Solid State Chemistry, Vol. 220, p. 232-237
https://doi.org/10.1016/j.jssc.2014.08.030

Compositional dependence of structural and electronic properties of Cu $_{2}$ ZnSn(S,Se) $_{4}$ alloys for thin film solar cells
journal, March 2011

Chen, Shiyou; Walsh, Aron; Yang, Ji-Hui
Physical Review B, Vol. 83, Issue 12
https://doi.org/10.1103/PhysRevB.83.125201

The effect of Na in polycrystalline and epitaxial single-crystal CuIn_1−xGa_xSe₂
journal, June 2005

Rockett, A.
Thin Solid Films, Vol. 480-481, p. 2-7
https://doi.org/10.1016/j.tsf.2004.11.038

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Similar Records

Title: Achieving band gap grading of CZTS and CZTSe materials

Abstract

Citation Formats

GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon patent, September 2009

Cu 2 Zn(Sn,Ge)Se 4 and Cu 2 Zn(Sn,Si)Se 4 alloys as photovoltaic materials: Structural and electronic properties journal, March 2013

Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation journal, April 2014

A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors journal, March 2001

Enhancing the performance of CZTSSe solar cells with Ge alloying journal, October 2012

Hydrazine-Processed Ge-Substituted CZTSe Solar Cells journal, November 2012

Crystal chemistry and optical investigations of the Cu2Zn(Sn,Si)S4 series for photovoltaic applications journal, December 2014

Compositional dependence of structural and electronic properties of Cu 2 ZnSn(S,Se) 4 alloys for thin film solar cells journal, March 2011

The effect of Na in polycrystalline and epitaxial single-crystal CuIn1−xGaxSe2 journal, June 2005

GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
patent, September 2009

Cu $_{2}$ Zn(Sn,Ge)Se $_{4}$ and Cu $_{2}$ Zn(Sn,Si)Se $_{4}$ alloys as photovoltaic materials: Structural and electronic properties
journal, March 2013

Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation
journal, April 2014

A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors
journal, March 2001

Enhancing the performance of CZTSSe solar cells with Ge alloying
journal, October 2012

Hydrazine-Processed Ge-Substituted CZTSe Solar Cells
journal, November 2012

Crystal chemistry and optical investigations of the Cu₂Zn(Sn,Si)S₄ series for photovoltaic applications
journal, December 2014

Compositional dependence of structural and electronic properties of Cu $_{2}$ ZnSn(S,Se) $_{4}$ alloys for thin film solar cells
journal, March 2011

The effect of Na in polycrystalline and epitaxial single-crystal CuIn_1−xGa_xSe₂
journal, June 2005