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Title: Method and system for preparing polycrystalline group III metal nitride

Abstract

A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

Inventors:
; ; ;
Issue Date:
Research Org.:
SLT TECHNOLOGIES, INC., Los Angeles, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1485293
Patent Number(s):
10094017
Application Number:
15/011,266
Assignee:
SLT TECHNOLOGIES, INC. (Los Angeles, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
DOE Contract Number:  
AR0000020
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Jan 29
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE

Citation Formats

Pocius, Douglas W., Kamber, Derrick S., D'Evelyn, Mark P., and Cook, Jonathan D. Method and system for preparing polycrystalline group III metal nitride. United States: N. p., 2018. Web.
Pocius, Douglas W., Kamber, Derrick S., D'Evelyn, Mark P., & Cook, Jonathan D. Method and system for preparing polycrystalline group III metal nitride. United States.
Pocius, Douglas W., Kamber, Derrick S., D'Evelyn, Mark P., and Cook, Jonathan D. Tue . "Method and system for preparing polycrystalline group III metal nitride". United States. https://www.osti.gov/servlets/purl/1485293.
@article{osti_1485293,
title = {Method and system for preparing polycrystalline group III metal nitride},
author = {Pocius, Douglas W. and Kamber, Derrick S. and D'Evelyn, Mark P. and Cook, Jonathan D.},
abstractNote = {A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 09 00:00:00 EDT 2018},
month = {Tue Oct 09 00:00:00 EDT 2018}
}

Works referenced in this record:

Process and apparatus for the growth of nitride materials
patent, June 2002


Conformationally constrained Smac mimetics and the uses thereof
patent, April 2011


Method for making crystalline composition
patent, May 2011


Crystalline composition, device, and associated method
patent, October 2011


Polycrystalline III-nitrides
patent, October 2014


Thermal Interface Material and Heat Sink Configuration
patent-application, November 2002


POLYCRYSTALLINE ALUMINUM NITRIDE MATERIAL AND METHOD OF PRODUCTION THEREOF
patent-application, January 2012


Synthesis of dense polycrystalline GaN of high purity by the chemical vapor reaction process
journal, January 2006


Strain relaxation in GaN layers grown on porous GaN sublayers
journal, January 1999