Title: Spasers to speed up CMOS processors

Abstract

A processor includes a transistor pair of a first transistor and a second transistor. The first transistor of the transistor pair is coupled to a Spaser and configured to output a drive current to the Spaser to pump the Spaser. Responsive to the drive current, the Spaser outputs surface plasmon polaritons (SPPs) which are fed to a plasmonic interconnect wire. The plasmonic interconnect wire propagates the SPPs. Further, the SPPs propagated on the plasmonic interconnect wire are detected by a phototransistor. Responsive to detecting the SPPs, the phototransistor generates an output current that is fed to a gate terminal of the second transistor to charge the second transistor.

Inventors:

Stockman, Mark

Issue Date:

Tue Oct 09 00:00:00 EDT 2018

Research Org.:

Georgia State University Research Foundation, Atlanta, GA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1485286

Patent Number(s):

10096675

Application Number:

14/777,769

Assignee:

Georgia State University Research Foundation (Atlanta, GA)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

G02B6/1226 - {involving surface plasmon interaction}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L23/5283 - {Cross-sectional geometry}
H01L27/092 - complementary MIS field-effect transistors
H01L29/0847 - {of field-effect transistors with insulated gate
H01L29/165 - in different semiconductor regions {, e.g. heterojunctions}
H01L29/78 - with field effect produced by an insulated gate {
H01L31/1136 - {the device being a metal-insulator-semiconductor field-effect transistor}

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DOE Contract Number:  

FG02-01ER15213; FG02-11ER46789

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Apr 11

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING