Systems and methods to maintain optimum stoichiometry for reactively sputtered films

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Title: Systems and methods to maintain optimum stoichiometry for reactively sputtered films

Abstract

The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.

Issue Date:: Tue Sep 11 00:00:00 EDT 2018

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1478528

Patent Number(s):: 10074522

Application Number:: 14/671,284

Assignee:: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

Show more

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C14/0042 - {Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements}
C23C14/0094 - {in transition mode}
C23C14/083 - {of refractory metals or yttrium}
C23C14/3485 - {using pulsed power to the target}
C23C14/3492 - {Variation of parameters during sputtering}
C23C14/548 - {Controlling the composition}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J37/32449 - {Gas control, e.g. control of the gas flow}

Show less

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015 Mar 27

Country of Publication:: United States

Language:: English

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                    . Systems and methods to maintain optimum stoichiometry for reactively sputtered films.  United States: N. p., 2018. 
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                    . Systems and methods to maintain optimum stoichiometry for reactively sputtered films.  United States.

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        "Systems and methods to maintain optimum stoichiometry for reactively sputtered films".  United States.  https://www.osti.gov/servlets/purl/1478528.

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@article{osti_1478528,

  title        = {Systems and methods to maintain optimum stoichiometry for reactively sputtered films},

  author       = {},

  abstractNote = {The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Sep 11 00:00:00 EDT 2018},

  month        = {Tue Sep 11 00:00:00 EDT 2018}

}

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Mickel, Patrick R.; James, Conrad D.
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Similar Records

Title: Systems and methods to maintain optimum stoichiometry for reactively sputtered films

Abstract

Citation Formats

The missing memristor found journal, May 2008

Multilayer memristive/memcapacitive devices with engineered conduction fronts journal, June 2013

Partial pressure control of reactively sputtered titanium nitride journal, May 1985

Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications journal, March 2014

Engineering nonlinearity into memristors for passive crossbar applications journal, March 2012

High switching endurance in TaOx memristive devices journal, December 2010

Nanoionics-based resistive switching memories journal, November 2007

Enhanced sputtering of titanium oxide, nitride and oxynitride thin films by the reactive gas pulsing technique journal, July 2001

A CMOS Compatible, Forming Free TaOx ReRAM journal, August 2013

Optimizing TaOx memristor performance and consistency within the reactive sputtering “forbidden region” journal, August 2013

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors journal, February 2012

Isothermal Switching and Detailed Filament Evolution in Memristive Systems journal, April 2014

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures journal, July 2011

Detection and characterization of multi-filament evolution during resistive switching journal, August 2014

Process for fabricating a microelectromechanical structure patent, October 2004

Memristive devices for computing journal, January 2013

Nanoscale Memristor Device as Synapse in Neuromorphic Systems journal, April 2010

Memristive switching: physical mechanisms and applications journal, April 2014

Low power ReRAM with Fab-friendly materials through PVD morphology and stoichiometry control conference, April 2011

Degenerate resistive switching and ultrahigh density storage in resistive memory journal, September 2014

Forming-free resistive switching of TiOx layers with oxygen injection treatments conference, April 2011

Reactive sputtering characteristics of silicon in an ArN2 mixture journal, March 1986

Reactive D.C. sputtering with the magnetron-plasmatron for tantalum pentoxide and titanium dioxide films journal, November 1979

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges journal, July 2009

Analytical estimations for thermal crosstalk, retention, and scaling limits in filamentary resistive memory journal, June 2014

Mechanism of electrical shorting failure mode in resistive switching journal, July 2014

Reactive sputter deposition of titanium dioxide journal, February 2000

High rate reactive sputtering process control journal, December 1987

Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism conference, December 2008

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM conference, December 2008

Hysteresis effect in reactive sputtering: a problem of system stability journal, September 1986

A physical model of switching dynamics in tantalum oxide memristive devices journal, June 2013

Modeling of reactive sputtering of compound materials journal, March 1987

Control of reactive sputtering processes journal, November 2005

A physical model for eliminating instabilities in reactive sputtering journal, May 1988

Dynamics of percolative breakdown mechanism in tantalum oxide resistive switching journal, October 2013

Reactive gas control of non-stable plasma conditions journal, April 2006

Chemical insight into origin of forming-free resistive random-access memory devices journal, September 2011

Modeling of filamentary resistive memory by concentric cylinders with variable conductivity journal, November 2014

Reactive high rate D.C. sputtering: Deposition rate, stoichiometry and features of TiOx and TiNx films with respect to the target mode journal, January 1984

Metal oxide memories based on thermochemical and valence change mechanisms journal, February 2012

Erratum: The missing memristor found journal, June 2009

Spectromicroscopy of tantalum oxide memristors journal, June 2011

Memristor using a transition metal nitride insulator patent, October 2014

Statistical insight into controlled forming and forming free stacks for HfOx RRAM journal, September 2013

Passive electrically switchable circuit element having improved tunability and method for its manufacture patent, September 2014

The missing memristor found
journal, May 2008

Multilayer memristive/memcapacitive devices with engineered conduction fronts
journal, June 2013

Partial pressure control of reactively sputtered titanium nitride
journal, May 1985

Reactive sputtering of substoichiometric Ta₂O_x for resistive memory applications
journal, March 2014

Engineering nonlinearity into memristors for passive crossbar applications
journal, March 2012

High switching endurance in TaOx memristive devices
journal, December 2010

Nanoionics-based resistive switching memories
journal, November 2007

Enhanced sputtering of titanium oxide, nitride and oxynitride thin films by the reactive gas pulsing technique
journal, July 2001

A CMOS Compatible, Forming Free TaO_x ReRAM
journal, August 2013

Optimizing TaO_x memristor performance and consistency within the reactive sputtering “forbidden region”
journal, August 2013

Continuous Electrical Tuning of the Chemical Composition of TaO_x-Based Memristors
journal, February 2012

Isothermal Switching and Detailed Filament Evolution in Memristive Systems
journal, April 2014

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta₂O_5−x/TaO_2−x bilayer structures
journal, July 2011

Detection and characterization of multi-filament evolution during resistive switching
journal, August 2014

Process for fabricating a microelectromechanical structure
patent, October 2004

Memristive devices for computing
journal, January 2013

Nanoscale Memristor Device as Synapse in Neuromorphic Systems
journal, April 2010

Memristive switching: physical mechanisms and applications
journal, April 2014

Low power ReRAM with Fab-friendly materials through PVD morphology and stoichiometry control
conference, April 2011

Degenerate resistive switching and ultrahigh density storage in resistive memory
journal, September 2014

Forming-free resistive switching of TiOx layers with oxygen injection treatments
conference, April 2011

Reactive sputtering characteristics of silicon in an ArN₂ mixture
journal, March 1986

Reactive D.C. sputtering with the magnetron-plasmatron for tantalum pentoxide and titanium dioxide films
journal, November 1979

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009

Analytical estimations for thermal crosstalk, retention, and scaling limits in filamentary resistive memory
journal, June 2014

Mechanism of electrical shorting failure mode in resistive switching
journal, July 2014

Reactive sputter deposition of titanium dioxide
journal, February 2000

High rate reactive sputtering process control
journal, December 1987

Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism
conference, December 2008

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM
conference, December 2008

Hysteresis effect in reactive sputtering: a problem of system stability
journal, September 1986

A physical model of switching dynamics in tantalum oxide memristive devices
journal, June 2013

Modeling of reactive sputtering of compound materials
journal, March 1987

Control of reactive sputtering processes
journal, November 2005

A physical model for eliminating instabilities in reactive sputtering
journal, May 1988

Dynamics of percolative breakdown mechanism in tantalum oxide resistive switching
journal, October 2013

Reactive gas control of non-stable plasma conditions
journal, April 2006

Chemical insight into origin of forming-free resistive random-access memory devices
journal, September 2011

Modeling of filamentary resistive memory by concentric cylinders with variable conductivity
journal, November 2014

Reactive high rate D.C. sputtering: Deposition rate, stoichiometry and features of TiO_x and TiN_x films with respect to the target mode
journal, January 1984

Metal oxide memories based on thermochemical and valence change mechanisms
journal, February 2012

Erratum: The missing memristor found
journal, June 2009

Spectromicroscopy of tantalum oxide memristors
journal, June 2011

Memristor using a transition metal nitride insulator
patent, October 2014

Statistical insight into controlled forming and forming free stacks for HfO_x RRAM
journal, September 2013

Passive electrically switchable circuit element having improved tunability and method for its manufacture
patent, September 2014