Optically switched graphene/4H-SiC junction bipolar transistor
Abstract
A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on a first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of South Carolina, Columbia, SC (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1440015
- Patent Number(s):
- 9966491
- Application Number:
- 15/049,743
- Assignee:
- University of South Carolina (Columbia, SC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- 12-3834
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Feb 22
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Chandrashekhar, MVS, Sudarshan, Tangali S., Omar, Sabih U., Brown, Gabriel, and Shetu, Shamaita S. Optically switched graphene/4H-SiC junction bipolar transistor. United States: N. p., 2018.
Web.
Chandrashekhar, MVS, Sudarshan, Tangali S., Omar, Sabih U., Brown, Gabriel, & Shetu, Shamaita S. Optically switched graphene/4H-SiC junction bipolar transistor. United States.
Chandrashekhar, MVS, Sudarshan, Tangali S., Omar, Sabih U., Brown, Gabriel, and Shetu, Shamaita S. Tue .
"Optically switched graphene/4H-SiC junction bipolar transistor". United States. https://www.osti.gov/servlets/purl/1440015.
@article{osti_1440015,
title = {Optically switched graphene/4H-SiC junction bipolar transistor},
author = {Chandrashekhar, MVS and Sudarshan, Tangali S. and Omar, Sabih U. and Brown, Gabriel and Shetu, Shamaita S.},
abstractNote = {A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on a first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 08 00:00:00 EDT 2018},
month = {Tue May 08 00:00:00 EDT 2018}
}
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Works referenced in this record:
Trenched mosfets with embedded schottky in the same cell
patent-application, October 2008
- Hshieh, Fwu-Iuan
- US Patent Application 11/732955; 20080246082
Si-adatom kinetics in defect mediated growth of multilayer epitaxial graphene films on 6H-SiC
journal, October 2013
- Shetu, Shamaita S.; Omar, S. U.; Daniels, K. M.
- Journal of Applied Physics, Vol. 114, Issue 16, Article No. 164903
Vapor phase surface preparation (etching) of 4H–SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy
journal, October 2013
- Rana, T.; Chandrashekhar, M. V. S.; Sudarshan, Tangali S.
- Journal of Crystal Growth, Vol. 380, p. 61-67
Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
journal, October 2013
- Coletti, C.; Forti, S.; Principi, A.
- Physical Review B, Vol. 88, Issue 15, Article No. 155439
Photovoltaic Devices with an Interfacial Band-Gap Modifying Structure and Methods for Forming the Same
patent-application, February 2012
- Fogel, Keith E.; Kim, Jee H.; Sadana, Devendra K.
- US Patent Application 12/850272; 20120031477
Defect Engineered High Quality Multilayer Epitaxial Graphene Growth with Thickness Controllability
patent-application, December 2015
- Sudarshan, Tangali S.; Rana, Tawhid; Chandrashekhar, Mv. S.
- US Patent Application 14/767095; 20150368827
Insulated gate bipolar transistor
patent, February 1992
- Hagino, Hiroyasu
- US Patent Document 5,086,324
Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation
journal, June 2006
- Seyller, Th.; Emtsev, K. V.; Speck, F.
- Applied Physics Letters, Vol. 88, Issue 24, Article No. 242103
Polariton enhanced infrared reflection of epitaxial graphene
journal, December 2011
- Daas, B. K.; Daniels, K. M.; Sudarshan, T. S.
- Journal of Applied Physics, Vol. 110, Issue 11, Article No. 113114
Bipolar-mode Schottky contact and applications to high-speed diodes
journal, January 1984
- Amemiya, Y.; Mizushima, Y.
- IEEE Transactions on Electron Devices, Vol. 31, Issue 1, p. 35-42