Modification of electrical properties of topological insulators
Abstract
Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1377859
- Patent Number(s):
- 9748345
- Application Number:
- 15/177,215
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Jun 08
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Sharma, Peter Anand. Modification of electrical properties of topological insulators. United States: N. p., 2017.
Web.
Sharma, Peter Anand. Modification of electrical properties of topological insulators. United States.
Sharma, Peter Anand. Tue .
"Modification of electrical properties of topological insulators". United States. https://www.osti.gov/servlets/purl/1377859.
@article{osti_1377859,
title = {Modification of electrical properties of topological insulators},
author = {Sharma, Peter Anand},
abstractNote = {Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 29 00:00:00 EDT 2017},
month = {Tue Aug 29 00:00:00 EDT 2017}
}
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