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Title: Modification of electrical properties of topological insulators

Abstract

Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.

Inventors:
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1377859
Patent Number(s):
9748345
Application Number:
15/177,215
Assignee:
National Technology & Engineering Solutions of Sandia, LLC
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Jun 08
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Sharma, Peter Anand. Modification of electrical properties of topological insulators. United States: N. p., 2017. Web.
Sharma, Peter Anand. Modification of electrical properties of topological insulators. United States.
Sharma, Peter Anand. Tue . "Modification of electrical properties of topological insulators". United States. https://www.osti.gov/servlets/purl/1377859.
@article{osti_1377859,
title = {Modification of electrical properties of topological insulators},
author = {Sharma, Peter Anand},
abstractNote = {Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 29 00:00:00 EDT 2017},
month = {Tue Aug 29 00:00:00 EDT 2017}
}

Works referenced in this record:

Simple tuning of carrier type in topological insulator Bi2Se3 by Mn doping
journal, October 2012


Topological Insulator Materials
journal, October 2013


Colloquium: Topological insulators
journal, November 2010


Review of 3D topological insulator thin-film growth by molecular beam epitaxy and potential applications
journal, January 2013


p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications
journal, May 2009


Ion beam modification of topological insulator bismuth selenide
journal, December 2014