Dry etch method for texturing silicon and device

Gershon, Talia S.; Haight, Richard A.; Kim, Jeehwan; Lee, Yun Seog

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Title: Dry etch method for texturing silicon and device

Abstract

A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

Inventors:: Gershon, Talia S.; Haight, Richard A.; Kim, Jeehwan; Lee, Yun Seog

Issue Date:: Tue Jul 25 00:00:00 EDT 2017

Research Org.:: International Business Machines Corp., Armonk, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1372649

Patent Number(s):: 9716195

Application Number:: 14/747,954

Assignee:: International Business Machines Corporation

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02363 - {of the semiconductor body itself, e.g. textured active layers}
H01L31/02366 - {of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate}
H01L31/035281 - {Shape of the body}
H01L31/036 - characterised by their crystalline structure or particular orientation of the crystalline planes
H01L31/03921 - {including only elements of Group IV of the Periodic System}
H01L31/0747 - comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}
H01L31/1864 - {Annealing}
H01L31/208 - {Particular post-treatment of the devices, e.g. annealing, short-circuit elimination}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy
Y02E10/547 - Monocrystalline silicon PV cells

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DOE Contract Number:: EE0006334

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015 Jun 23

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Gershon, Talia S., Haight, Richard A., Kim, Jeehwan, and Lee, Yun Seog. Dry etch method for texturing silicon and device.  United States: N. p., 2017. 
        Web.

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                    Gershon, Talia S., Haight, Richard A., Kim, Jeehwan, & Lee, Yun Seog. Dry etch method for texturing silicon and device.  United States.

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                    Gershon, Talia S., Haight, Richard A., Kim, Jeehwan, and Lee, Yun Seog. Tue .  
        "Dry etch method for texturing silicon and device".  United States.  https://www.osti.gov/servlets/purl/1372649.

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@article{osti_1372649,

  title        = {Dry etch method for texturing silicon and device},

  author       = {Gershon, Talia S. and Haight, Richard A. and Kim, Jeehwan and Lee, Yun Seog},

  abstractNote = {A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Jul 25 00:00:00 EDT 2017},

  month        = {Tue Jul 25 00:00:00 EDT 2017}

}

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Works referenced in this record:

Gaseous nonpreferential etching of silicon
patent, July 1972

Hayes, Robert G.
US Patent Document 3,679,502
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/3679502

Dry etching method
patent, November 1993

Kadomura, Shingo
US Patent Document 5,266,157
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5266157

Dry etching method
patent, May 1994

Kadomura, Shingo
US Patent Document 5,310,456
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5310456

Dry etching method using (SN).sub.x protective layer
patent, May 1994

Kadomura, Shingo
US Patent Document 5,314,576
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5314576

Epitaxial growth of CZT(S,Se) on silicon
patent, March 2016

Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik
US Patent Document 9,287,426
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9287426

User Control Interface
patent-application, January 2009

Lerenius, Jacob
US Patent Application 11/828470; 20090026053
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20090026053

Copper Layer Processing
patent-application, March 2010

Rueger, Neal R.
US Patent Application 12/203460; 20100051577
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20100051577

Dry Etching Method
patent-application, May 2012

Yoshii, Manabu; Watanabe, Kazuhiro
US Patent Application 13/387670; 20120129278
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20120129278

Method and Apparatus to Control Surface Texture Modification of Silicon Wafers for Photovoltaic Cell Devices
patent-application, March 2013

Duffy, Edward; Clochard, Laurent
US Patent Application 13/696730; 20130069204
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20130069204

Polycrystalline-Type Solar Cell Panel and Process For Production Thereof
patent-application, April 2013

Nakayama, Ichiro; Yamanishi, Hitoshi; Chido, Yoshihisa
US Patent Application 13/635962; 20130081694
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20130081694

Plasma Etching Method
patent-application, February 2014

Tohnoe, Kazuhito; Hirayama, Yusuke; Ishiyama, Yasuyoshi
US Patent Application 13/983826; 20140045338
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20140045338

Hydrogen Sulfide as an Etchant for Silicon
journal, January 1969

Rai-Choudhury, P.; Noreika, A. J.
Journal of The Electrochemical Society, Vol. 116, Issue 4, p. 539-541
https://doi.org/10.1149/1.2411945

Anisotropic Reactive Ion Etching of Silicon Using SF₆/O_2/CHF₃ Gas Mixtures
journal, January 1995

Legtenberg, Rob; Jansen, Henri; de Boer, Meint
Journal of The Electrochemical Society, Vol. 142, Issue 6, p. 2020-2028
https://doi.org/10.1149/1.2044234

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Similar Records

Title: Dry etch method for texturing silicon and device

Abstract

Citation Formats

Gaseous nonpreferential etching of silicon patent, July 1972

Dry etching method patent, November 1993

Dry etching method patent, May 1994

Dry etching method using (SN).sub.x protective layer patent, May 1994

Epitaxial growth of CZT(S,Se) on silicon patent, March 2016

User Control Interface patent-application, January 2009

Copper Layer Processing patent-application, March 2010

Dry Etching Method patent-application, May 2012

Method and Apparatus to Control Surface Texture Modification of Silicon Wafers for Photovoltaic Cell Devices patent-application, March 2013

Polycrystalline-Type Solar Cell Panel and Process For Production Thereof patent-application, April 2013

Plasma Etching Method patent-application, February 2014

Hydrogen Sulfide as an Etchant for Silicon journal, January 1969

Anisotropic Reactive Ion Etching of Silicon Using SF6/O2/CHF3 Gas Mixtures journal, January 1995

Gaseous nonpreferential etching of silicon
patent, July 1972

Dry etching method
patent, November 1993

Dry etching method
patent, May 1994

Dry etching method using (SN).sub.x protective layer
patent, May 1994

Epitaxial growth of CZT(S,Se) on silicon
patent, March 2016

User Control Interface
patent-application, January 2009

Copper Layer Processing
patent-application, March 2010

Dry Etching Method
patent-application, May 2012

Method and Apparatus to Control Surface Texture Modification of Silicon Wafers for Photovoltaic Cell Devices
patent-application, March 2013

Polycrystalline-Type Solar Cell Panel and Process For Production Thereof
patent-application, April 2013

Plasma Etching Method
patent-application, February 2014

Hydrogen Sulfide as an Etchant for Silicon
journal, January 1969

Anisotropic Reactive Ion Etching of Silicon Using SF₆/O_2/CHF₃ Gas Mixtures
journal, January 1995