Three dimensional strained semiconductors
Abstract
In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1331170
- Patent Number(s):
- 9490318
- Application Number:
- 13/912,885
- Assignee:
- Lawrence Livermore National Security, LLC
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Jun 07
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Voss, Lars, Conway, Adam, Nikolic, Rebecca J., Leao, Cedric Rocha, and Shao, Qinghui. Three dimensional strained semiconductors. United States: N. p., 2016.
Web.
Voss, Lars, Conway, Adam, Nikolic, Rebecca J., Leao, Cedric Rocha, & Shao, Qinghui. Three dimensional strained semiconductors. United States.
Voss, Lars, Conway, Adam, Nikolic, Rebecca J., Leao, Cedric Rocha, and Shao, Qinghui. Tue .
"Three dimensional strained semiconductors". United States. https://www.osti.gov/servlets/purl/1331170.
@article{osti_1331170,
title = {Three dimensional strained semiconductors},
author = {Voss, Lars and Conway, Adam and Nikolic, Rebecca J. and Leao, Cedric Rocha and Shao, Qinghui},
abstractNote = {In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 08 00:00:00 EST 2016},
month = {Tue Nov 08 00:00:00 EST 2016}
}
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