Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof
Abstract
The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1330348
- Patent Number(s):
- 9477040
- Application Number:
- 14/801,257
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Jul 16
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Skogen, Erik J. Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof. United States: N. p., 2016.
Web.
Skogen, Erik J. Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof. United States.
Skogen, Erik J. Tue .
"Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof". United States. https://www.osti.gov/servlets/purl/1330348.
@article{osti_1330348,
title = {Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof},
author = {Skogen, Erik J.},
abstractNote = {The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 25 00:00:00 EDT 2016},
month = {Tue Oct 25 00:00:00 EDT 2016}
}
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