Title: Environmentally-assisted technique for transferring devices onto non-conventional substrates

Abstract

A device fabrication method includes: (1) providing a growth substrate including an oxide layer; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing fluid-assisted interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

Inventors:

Lee, Chi-Hwan; Kim, Dong Rip; Zheng, Xiaolin

Issue Date:

Tue May 10 00:00:00 EDT 2016

Research Org.:

Stanford Univ., CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1252201

Patent Number(s):

9337169

Application Number:

14/340,425

Assignee:

The Board of Trustees of the Leland Stanford Junior University (Palo Alto, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/7806 - {involving the separation of the active layers from a substrate}
H01L24/03 - {Manufacturing methods}
H01L24/98 - {Methods for disconnecting semiconductor or solid-state bodies}
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/12033 - Gunn diode
H01L2924/1306 - Field-effect transistor [FET]
H01L2924/351 - Thermal stress
H01L31/1896 - {for thin-film semiconductors}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/50 - Photovoltaic [PV] energy

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DOE Contract Number:  

SC0001060

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Jul 24

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE