Carbon nanotube network thin-film transistors on flexible/stretchable substrates
Abstract
This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1244219
- Patent Number(s):
- 9299940
- Application Number:
- 14/065,218
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Oct 28
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Takei, Kuniharu, Takahashi, Toshitake, and Javey, Ali. Carbon nanotube network thin-film transistors on flexible/stretchable substrates. United States: N. p., 2016.
Web.
Takei, Kuniharu, Takahashi, Toshitake, & Javey, Ali. Carbon nanotube network thin-film transistors on flexible/stretchable substrates. United States.
Takei, Kuniharu, Takahashi, Toshitake, and Javey, Ali. Tue .
"Carbon nanotube network thin-film transistors on flexible/stretchable substrates". United States. https://www.osti.gov/servlets/purl/1244219.
@article{osti_1244219,
title = {Carbon nanotube network thin-film transistors on flexible/stretchable substrates},
author = {Takei, Kuniharu and Takahashi, Toshitake and Javey, Ali},
abstractNote = {This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 29 00:00:00 EDT 2016},
month = {Tue Mar 29 00:00:00 EDT 2016}
}
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