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Title: Method of forming emitters for a back-contact solar cell

Abstract

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.

Inventors:
; ;
Issue Date:
Research Org.:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1221873
Patent Number(s):
9147795
Application Number:
14/555,383
Assignee:
SunPower Corporation (San Jose, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Nov 26
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Li, Bo, Cousins, Peter J., and Smith, David D. Method of forming emitters for a back-contact solar cell. United States: N. p., 2015. Web.
Li, Bo, Cousins, Peter J., & Smith, David D. Method of forming emitters for a back-contact solar cell. United States.
Li, Bo, Cousins, Peter J., and Smith, David D. Tue . "Method of forming emitters for a back-contact solar cell". United States. https://www.osti.gov/servlets/purl/1221873.
@article{osti_1221873,
title = {Method of forming emitters for a back-contact solar cell},
author = {Li, Bo and Cousins, Peter J. and Smith, David D.},
abstractNote = {Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 29 00:00:00 EDT 2015},
month = {Tue Sep 29 00:00:00 EDT 2015}
}

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