Light emitting diode package element with internal meniscus for bubble free lens placement
Abstract
A method for fabricating a light emitting diode (LED) package comprising providing an LED chip and covering at least part of the LED chip with a liquid encapsulant having a radius of curvature. An optical element is provided having a bottom surface with at least a portion having a radius of curvature larger than the liquid encapsulant. The larger radius of curvature portion of the optical element is brought into contact with the liquid encapsulant. The optical element is then moved closer to the LED chip, growing the contact area between said optical element and said liquid encapsulant. The liquid encapsulant is then cured. A light emitting diode comprising a substrate with an LED chip mounted to it. A meniscus ring is on the substrate around the LED chip with the meniscus ring having a meniscus holding feature. An inner encapsulant is provided over the LED chip with the inner encapsulant having a contacting surface on the substrate, with the meniscus holding feature which defines the edge of the contacting surface. An optical element is included having a bottom surface with at least a portion that is concave. The optical element is arranged on the substrate with the concave portionmore »
- Inventors:
- Issue Date:
- Research Org.:
- Cree, Inc., Goleta, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1176415
- Patent Number(s):
- 7804147
- Application Number:
- 11/496,918
- Assignee:
- Cree, Inc. (Goleta, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FC26-05NT42340
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2006 Jul 31
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Tarsa, Eric, Yuan, Thomas C., Becerra, Maryanne, and Yadev, Praveen. Light emitting diode package element with internal meniscus for bubble free lens placement. United States: N. p., 2010.
Web.
Tarsa, Eric, Yuan, Thomas C., Becerra, Maryanne, & Yadev, Praveen. Light emitting diode package element with internal meniscus for bubble free lens placement. United States.
Tarsa, Eric, Yuan, Thomas C., Becerra, Maryanne, and Yadev, Praveen. Tue .
"Light emitting diode package element with internal meniscus for bubble free lens placement". United States. https://www.osti.gov/servlets/purl/1176415.
@article{osti_1176415,
title = {Light emitting diode package element with internal meniscus for bubble free lens placement},
author = {Tarsa, Eric and Yuan, Thomas C. and Becerra, Maryanne and Yadev, Praveen},
abstractNote = {A method for fabricating a light emitting diode (LED) package comprising providing an LED chip and covering at least part of the LED chip with a liquid encapsulant having a radius of curvature. An optical element is provided having a bottom surface with at least a portion having a radius of curvature larger than the liquid encapsulant. The larger radius of curvature portion of the optical element is brought into contact with the liquid encapsulant. The optical element is then moved closer to the LED chip, growing the contact area between said optical element and said liquid encapsulant. The liquid encapsulant is then cured. A light emitting diode comprising a substrate with an LED chip mounted to it. A meniscus ring is on the substrate around the LED chip with the meniscus ring having a meniscus holding feature. An inner encapsulant is provided over the LED chip with the inner encapsulant having a contacting surface on the substrate, with the meniscus holding feature which defines the edge of the contacting surface. An optical element is included having a bottom surface with at least a portion that is concave. The optical element is arranged on the substrate with the concave portion over the LED chip. A contacting encapsulant is included between the inner encapsulant and optical element.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 28 00:00:00 EDT 2010},
month = {Tue Sep 28 00:00:00 EDT 2010}
}
Works referenced in this record:
Experimental investigation of dependence of electrical characteristics on device parameters in trench MOS barrier Schottky diodes
conference, January 1998
- Sakai, T.; Matsumoto, S.; Yachi, T.
- International Symposium on Power Semiconductor Devices and IC's, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)
Strongly Enhanced Phosphor Efficiency in GaInN White Light-Emitting Diodes Using Remote Phosphor Configuration and Diffuse Reflector Cup
journal, April 2005
- Kim, Jong Kyu; Luo, Hong; Schubert, Eric Fred
- Japanese Journal of Applied Physics, Vol. 44, Issue No. 21
New UV Light Emitter Based on AlGaN Heterostructures with Graded Electron and Hole Injectors
journal, January 2002
- Johnson, M. A. L.; Long, J. P.; Schetzina, J. F.
- MRS Proceedings, Vol. 743
Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs
journal, February 2000
- Asbeck, P. M.; Yu, E. T.; Lau, S. S.
- Solid-State Electronics, Vol. 44, Issue 2
Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers
journal, January 2005
- Simon, John; Wang, Kejia; Xing, Huili
- MRS Proceedings, Vol. 892