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Title: Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias

Abstract

Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176093
Patent Number(s):
7170001
Application Number:
10/606,487
Assignee:
Advent Solar, Inc. (Albuquerque, NM); Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2003 Jun 26
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Gee, James M, and Schmit, Russell R. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias. United States: N. p., 2007. Web.
Gee, James M, & Schmit, Russell R. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias. United States.
Gee, James M, and Schmit, Russell R. Tue . "Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias". United States. https://www.osti.gov/servlets/purl/1176093.
@article{osti_1176093,
title = {Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias},
author = {Gee, James M and Schmit, Russell R.},
abstractNote = {Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 30 00:00:00 EST 2007},
month = {Tue Jan 30 00:00:00 EST 2007}
}

Works referenced in this record:

Al thermomigration applied to the formation of deep junctions for power device insulation
journal, January 1999


Random walk of liquid droplets migrating in silicon
journal, June 1976