Title: Membrane projection lithography

Abstract

The various technologies presented herein relate to a three dimensional manufacturing technique for application with semiconductor technologies. A membrane layer can be formed over a cavity. An opening can be formed in the membrane such that the membrane can act as a mask layer to the underlying wall surfaces and bottom surface of the cavity. A beam to facilitate an operation comprising any of implantation, etching or deposition can be directed through the opening onto the underlying surface, with the opening acting as a mask to control the area of the underlying surfaces on which any of implantation occurs, material is removed, and/or material is deposited. The membrane can be removed, a new membrane placed over the cavity and a new opening formed to facilitate another implantation, etching, or deposition operation. By changing the direction of the beam different wall/bottom surfaces can be utilized to form a plurality of structures.

Inventors:

Burckel, David Bruce; Davids, Paul S; Resnick, Paul J; Draper, Bruce L

Issue Date:

Tue Mar 17 00:00:00 EDT 2015

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1172748

Patent Number(s):

8981337

Application Number:

14/017,132

Assignee:

Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/31144 - {using masks}
H01L21/32 - using masks
H01L21/743 - {Making of internal connections, substrate contacts}
H01L21/76838 - {characterised by the formation and the after-treatment of the conductors
H01L21/8221 - {Three dimensional integrated circuits stacked in different levels}
H01L27/0688 - {Integrated circuits having a three-dimensional layout}

Show less

DOE Contract Number:  

AC04-94AL85000

Resource Type:

Patent

Resource Relation:

Patent File Date: 2013 Sep 03

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING