Nitride based quantum well light-emitting devices having improved current injection efficiency
Abstract
A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.
- Inventors:
- Issue Date:
- Research Org.:
- Lehigh Univeristy, Bethlehem, PA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1165122
- Patent Number(s):
- 8907321
- Application Number:
- 12/967,367
- Assignee:
- Lehigh Univeristy (Bethlehem, PA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FC26-08NT01581
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2010 Dec 14
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
Citation Formats
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Arif, Ronald. Nitride based quantum well light-emitting devices having improved current injection efficiency. United States: N. p., 2014.
Web.
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, & Arif, Ronald. Nitride based quantum well light-emitting devices having improved current injection efficiency. United States.
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Arif, Ronald. Tue .
"Nitride based quantum well light-emitting devices having improved current injection efficiency". United States. https://www.osti.gov/servlets/purl/1165122.
@article{osti_1165122,
title = {Nitride based quantum well light-emitting devices having improved current injection efficiency},
author = {Tansu, Nelson and Zhao, Hongping and Liu, Guangyu and Arif, Ronald},
abstractNote = {A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 09 00:00:00 EST 2014},
month = {Tue Dec 09 00:00:00 EST 2014}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Method of fabricating highly lattice mismatched quantum well structures
patent, April 1994
- Melman, Paul; Elman, Boris S.; Koteles, Emil S.
- US Patent Document 5,300,794
High efficiency light emitters with reduced polarization-induced charges
patent, February 2003
- Ibbetson, James; Thibeault, Brian
- US Patent Document 6,515,313
Semiconductor light emitting device and manufacturing method therefor
patent, November 2009
- Shakuda, Yukio
- US Patent Document 7,616,672
Group III nitride-based compound semiconductor light-emitting device and method for producing the same
patent, December 2009
- Taki, Tetsuya; Narukawa, Mitsuhisa; Aoki, Masato
- US Patent Document 7,629,619
Metamorphic buffer on small lattice constant substrates
patent, December 2009
- Lester, Luke; Dawson, Larry R.; Pease, Edwin A.
- US Patent Document 7,633,083
Group III nitride-based compound semiconductor light-emitting device and method for producing the same
patent-application, August 2006
- Taki, Tetsuya; Narukawa, Mitsuhisa; Aoki, Masato
- US Patent Application 11/340746; 20060169990
Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
patent-application, November 2007
- Nakamura, Shuji; Nagahama, Shinichi; Iwasa, Naruhito
- US Patent Application 11/635613; 20070272915
Nitride Semiconductor Light Emitting Device
patent-application, February 2009
- Kim, Min-Ho; Schubert, Martin F.; Kim, JOng Kyu
- US Patent Application 12/195088; 20090050875
Droop-Free High Output Light Emitting Devices and Methods of Fabricating and Operating Same
patent-application, February 2009
- Edmond, John Adam
- US Patent Application 12/199592; 20090050924
Laminated Structures
patent-application, December 2010
- Ahn, Doyeol
- US Patent Application 12/494056; 20100327278
Works referencing / citing this record:
Optoelectronic semiconductor chip
patent, December 2015
- Mandl, Martin; Straβburg, Martin; Kölper, Christopher
- US Patent Document 9,214,600