Method or forming emitters for a back-contact solar cell

Li, Bo; Cousins, Peter J.; Smith, David D.

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Title: Method or forming emitters for a back-contact solar cell

Abstract

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.

Inventors:: Li, Bo; Cousins, Peter J.; Smith, David D.

Issue Date:: Tue Aug 12 00:00:00 EDT 2014

Research Org.:: SunPower Corporation, San Jose, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1150083

Patent Number(s):: 8802486

Application Number:: 13/372,235

Assignee:: SunPower Corporation (San Jose, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/022441 - {Electrode arrangements specially adapted for back-contact solar cells}
H01L31/0682 - {back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells}
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}
H01L31/1864 - {Annealing}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/547 - Monocrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Show less

DOE Contract Number:: FC36-07GO17043

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Li, Bo, Cousins, Peter J., and Smith, David D. Method or forming emitters for a back-contact solar cell.  United States: N. p., 2014. 
        Web.

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                    Li, Bo, Cousins, Peter J., & Smith, David D. Method or forming emitters for a back-contact solar cell.  United States.

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                    Li, Bo, Cousins, Peter J., and Smith, David D. Tue .  
        "Method or forming emitters for a back-contact solar cell".  United States.  https://www.osti.gov/servlets/purl/1150083.

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@article{osti_1150083,

  title        = {Method or forming emitters for a back-contact solar cell},

  author       = {Li, Bo and Cousins, Peter J. and Smith, David D.},

  abstractNote = {Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Aug 12 00:00:00 EDT 2014},

  month        = {Tue Aug 12 00:00:00 EDT 2014}

}

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Similar Records in DOE Patents and OSTI.GOV collections:

Method of forming emitters for a back-contact solar cell

Patent Li, Bo; Cousins, Peter J.; Smith, David D.

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.
Full Text Available
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Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.
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Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.
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Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.
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Similar Records

Title: Method or forming emitters for a back-contact solar cell

Abstract

Citation Formats

Back side contact solar cell structures and fabrication processes patent-application, July 2007

Solar cell having silicon nano-particle emitter patent, April 2010

Methods of forming multi-doped junctions on a substrate patent, November 2009

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Method of forming contacts for a back-contact solar cell patent, July 2013

Trench process and structure for backside contact solar cells with polysilicon doped regions patent, October 2010

Phosphor materials and illumination devices made therefrom patent-application, December 2004

Method for preparing nanoparticle thin films patent, May 2010

Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions patent-application, March 2011

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Back Side Contact Solar Cell Structures And Fabrication Processes patent-application, January 2011

Light strips for lighting and backlighting applications patent-application, February 2006

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Backside Contact Solar Cell With Formed Polysilicon Doped Regions patent-application, June 2010

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Back side contact solar cell structures and fabrication processes patent, April 2012

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Preparation of group IV semiconductor nanoparticle materials and dispersions thereof patent, June 2010

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Method for preparing nanoparticle thin films
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Trench process and structure for backside contact solar cells with polysilicon doped regions
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Light strips for lighting and backlighting applications
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Trench Process And Structure For Backside Contact Solar Cells With Polysilicon Doped Regions
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Backside Contact Solar Cell With Formed Polysilicon Doped Regions
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Methods for optimizing thin film formation with reactive gases
patent, August 2009

Back side contact solar cell structures and fabrication processes
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Methods of Usinga a set of Silicon Nanoparticles Fluids to control in situ a set of Dopant Diffusion Profiles
patent-application, July 2010

Methods for creating a densified group IV semiconductor nanoparticle thin film
patent, April 2009

Dopant material for manufacturing solar cells
patent-application, April 2009

Preparation of group IV semiconductor nanoparticle materials and dispersions thereof
patent, June 2010

Phosphor materials and illumination devices made therefrom
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