DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Plasma processes for producing silanes and derivatives thereof

Abstract

The invention is generally related to process for generating one or more molecules having the formula Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z, and mixtures thereof, where x,y and z are integers .gtoreq.1, H is hydrogen and D is deuterium, such as silane, comprising the steps of: providing a silicon containing material, wherein the silicon containing material includes at least 20 weight percent silicon atoms based on the total weight of the silicon containing material; generating a plasma capable of vaporizing a silicon atom, sputtering a silicon atom, or both using a plasma generating device; and contacting the plasma to the silicon containing material in a chamber having an atmosphere that includes at least about 0.5 mole percent hydrogen atoms and/or deuterium atoms based on the total moles of atoms in the atmosphere; so that a molecule having the formula Si.sub.xH.sub.y; (e.g., silane) is generated. The process preferably includes a step of removing one or more impurities from the Si.sub.xH.sub.y (e.g., the silane) to form a clean Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z (e.g., silane). The process may also include a step of reacting the Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z (e.g., the silane) to produce a high purity silicon containing material such as electronic grade metallic silicon, photovoltaic grademore » metallic silicon, or both.

Inventors:
; ;
Issue Date:
Research Org.:
Mayaterials, Inc, Pinckney, MI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1128683
Patent Number(s):
8679438
Application Number:
13/021,324
Assignee:
Laine, Richard M. (Ann Arbor, MI)
Patent Classifications (CPCs):
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C - CHEMISTRY C22 - METALLURGY C22B - PRODUCTION AND REFINING OF METALS
DOE Contract Number:  
FG36-08GO18009
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Feb 04
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Laine, Richard M, Massey, Dean Richard, and Peterson, Peter Young. Plasma processes for producing silanes and derivatives thereof. United States: N. p., 2014. Web.
Laine, Richard M, Massey, Dean Richard, & Peterson, Peter Young. Plasma processes for producing silanes and derivatives thereof. United States.
Laine, Richard M, Massey, Dean Richard, and Peterson, Peter Young. Tue . "Plasma processes for producing silanes and derivatives thereof". United States. https://www.osti.gov/servlets/purl/1128683.
@article{osti_1128683,
title = {Plasma processes for producing silanes and derivatives thereof},
author = {Laine, Richard M and Massey, Dean Richard and Peterson, Peter Young},
abstractNote = {The invention is generally related to process for generating one or more molecules having the formula Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z, and mixtures thereof, where x,y and z are integers .gtoreq.1, H is hydrogen and D is deuterium, such as silane, comprising the steps of: providing a silicon containing material, wherein the silicon containing material includes at least 20 weight percent silicon atoms based on the total weight of the silicon containing material; generating a plasma capable of vaporizing a silicon atom, sputtering a silicon atom, or both using a plasma generating device; and contacting the plasma to the silicon containing material in a chamber having an atmosphere that includes at least about 0.5 mole percent hydrogen atoms and/or deuterium atoms based on the total moles of atoms in the atmosphere; so that a molecule having the formula Si.sub.xH.sub.y; (e.g., silane) is generated. The process preferably includes a step of removing one or more impurities from the Si.sub.xH.sub.y (e.g., the silane) to form a clean Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z (e.g., silane). The process may also include a step of reacting the Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z (e.g., the silane) to produce a high purity silicon containing material such as electronic grade metallic silicon, photovoltaic grade metallic silicon, or both.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 25 00:00:00 EDT 2014},
month = {Tue Mar 25 00:00:00 EDT 2014}
}

Works referenced in this record: