Plasma processes for producing silanes and derivatives thereof
Abstract
The invention is generally related to process for generating one or more molecules having the formula Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z, and mixtures thereof, where x,y and z are integers .gtoreq.1, H is hydrogen and D is deuterium, such as silane, comprising the steps of: providing a silicon containing material, wherein the silicon containing material includes at least 20 weight percent silicon atoms based on the total weight of the silicon containing material; generating a plasma capable of vaporizing a silicon atom, sputtering a silicon atom, or both using a plasma generating device; and contacting the plasma to the silicon containing material in a chamber having an atmosphere that includes at least about 0.5 mole percent hydrogen atoms and/or deuterium atoms based on the total moles of atoms in the atmosphere; so that a molecule having the formula Si.sub.xH.sub.y; (e.g., silane) is generated. The process preferably includes a step of removing one or more impurities from the Si.sub.xH.sub.y (e.g., the silane) to form a clean Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z (e.g., silane). The process may also include a step of reacting the Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z (e.g., the silane) to produce a high purity silicon containing material such as electronic grade metallic silicon, photovoltaic grademore »
- Inventors:
- Issue Date:
- Research Org.:
- Mayaterials, Inc, Pinckney, MI (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1128683
- Patent Number(s):
- 8679438
- Application Number:
- 13/021,324
- Assignee:
- Laine, Richard M. (Ann Arbor, MI)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C - CHEMISTRY C22 - METALLURGY C22B - PRODUCTION AND REFINING OF METALS
- DOE Contract Number:
- FG36-08GO18009
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Feb 04
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Laine, Richard M, Massey, Dean Richard, and Peterson, Peter Young. Plasma processes for producing silanes and derivatives thereof. United States: N. p., 2014.
Web.
Laine, Richard M, Massey, Dean Richard, & Peterson, Peter Young. Plasma processes for producing silanes and derivatives thereof. United States.
Laine, Richard M, Massey, Dean Richard, and Peterson, Peter Young. Tue .
"Plasma processes for producing silanes and derivatives thereof". United States. https://www.osti.gov/servlets/purl/1128683.
@article{osti_1128683,
title = {Plasma processes for producing silanes and derivatives thereof},
author = {Laine, Richard M and Massey, Dean Richard and Peterson, Peter Young},
abstractNote = {The invention is generally related to process for generating one or more molecules having the formula Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z, and mixtures thereof, where x,y and z are integers .gtoreq.1, H is hydrogen and D is deuterium, such as silane, comprising the steps of: providing a silicon containing material, wherein the silicon containing material includes at least 20 weight percent silicon atoms based on the total weight of the silicon containing material; generating a plasma capable of vaporizing a silicon atom, sputtering a silicon atom, or both using a plasma generating device; and contacting the plasma to the silicon containing material in a chamber having an atmosphere that includes at least about 0.5 mole percent hydrogen atoms and/or deuterium atoms based on the total moles of atoms in the atmosphere; so that a molecule having the formula Si.sub.xH.sub.y; (e.g., silane) is generated. The process preferably includes a step of removing one or more impurities from the Si.sub.xH.sub.y (e.g., the silane) to form a clean Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z (e.g., silane). The process may also include a step of reacting the Si.sub.xH.sub.y, Si.sub.xD.sub.y, Si.sub.xH.sub.yD.sub.z (e.g., the silane) to produce a high purity silicon containing material such as electronic grade metallic silicon, photovoltaic grade metallic silicon, or both.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 25 00:00:00 EDT 2014},
month = {Tue Mar 25 00:00:00 EDT 2014}
}
Works referenced in this record:
Polyhydridosilanes and their conversion to pyropolymers
patent, November 1987
- Brown-Wensley, Katherine A.; Sinclair, Robert A.
- US Patent Document 4,704,444
Silica nanoaggregates and organosilicon complexes and methods of forming them from biomass materials
patent, June 2016
- Sun, Luyi; Wang, Weixing
- US Patent Document 9,359,214