Layered semiconductor neutron detectors
Abstract
Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1109473
- Patent Number(s):
- 8604441
- Application Number:
- 12/999,909
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Mao, Samuel S, and Perry, Dale L. Layered semiconductor neutron detectors. United States: N. p., 2013.
Web.
Mao, Samuel S, & Perry, Dale L. Layered semiconductor neutron detectors. United States.
Mao, Samuel S, and Perry, Dale L. Tue .
"Layered semiconductor neutron detectors". United States. https://www.osti.gov/servlets/purl/1109473.
@article{osti_1109473,
title = {Layered semiconductor neutron detectors},
author = {Mao, Samuel S and Perry, Dale L},
abstractNote = {Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 10 00:00:00 EST 2013},
month = {Tue Dec 10 00:00:00 EST 2013}
}
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