Title: Growth and transfer of monolithic horizontal nanowire superstructures onto flexible substrates

Abstract

In a method of making a monolithic elongated nanowire, a mask polymer layer is applied to a selected crystal surface of a seed crystal. A plurality of spaced apart elongated openings is defined through the mask polymer layer, thereby exposing a corresponding plurality of portions of the crystal surface. The openings are disposed so as to be aligned with and parallel to a selected crystal axis of the seed crystal. The portions of the crystal surface are subjected to a chemical nutrient environment that causes crystalline material to grow from the plurality of portions for at least a period of time so that monocrystalline members grow from the elongated openings and until the monocrystalline members laterally expand so that each monocrystalline member grows into and merges with an adjacent one of the monocrystalline members, thereby forming a monolithic elongated nanowire.

Inventors:

Wang, Zhong L; Xu, Sheng

Issue Date:

Tue Aug 27 00:00:00 EDT 2013

Research Org.:

Georgia Institute of Technology, Atlanta, GA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1093357

Patent Number(s):

8518736

Application Number:

12/980,666

Assignee:

Georgia Tech Research Corporation (Atlanta, GA)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y40/00 - Manufacture or treatment of nanostructures

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/16 - Oxides
C30B29/60 - characterised by shape
C30B7/10 - by application of pressure, e.g. hydrothermal processes

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/0673 - {oriented parallel to a substrate}
H01L29/22 - including, apart from doping materials or other impurities, only AIIBVI compounds
H01L29/872 - Schottky diodes

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DOE Contract Number:  

FG02-07ER46394

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE