Method of fabricating conductive electrodes on the front and backside of a thin film structure
Abstract
A method of fabricating a thin film device having conductive front and backside electrodes or contacts. Top-side cavities are first formed on a first dielectric layer, followed by the deposition of a metal layer on the first dielectric layer to fill the cavities. Defined metal structures are etched from the metal layer to include the cavity-filled metal, followed by depositing a second dielectric layer over the metal structures. Additional levels of defined metal structures may be formed in a similar manner with vias connecting metal structures between levels. After a final dielectric layer is deposited, a top surface of a metal structure of an uppermost metal layer is exposed through the final dielectric layer to form a front-side electrode, and a bottom surface of a cavity-filled portion of a metal structure of a lowermost metal layer is also exposed through the first dielectric layer to form a back-side electrode.
- Inventors:
-
- Roseville, CA
- (Roseville, CA)
- Pleasanton, CA
- Issue Date:
- Research Org.:
- US Department of Energy (USDOE), Washington, DC (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1042627
- Patent Number(s):
- 8183111
- Application Number:
- 12/959,232
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Classifications (CPCs):
-
A - HUMAN NECESSITIES A61 - MEDICAL OR VETERINARY SCIENCE A61N - ELECTROTHERAPY
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Tabada, Phillipe J, Tabada, legal representative, Melody, and Pannu, Satinderpall S. Method of fabricating conductive electrodes on the front and backside of a thin film structure. United States: N. p., 2011.
Web.
Tabada, Phillipe J, Tabada, legal representative, Melody, & Pannu, Satinderpall S. Method of fabricating conductive electrodes on the front and backside of a thin film structure. United States.
Tabada, Phillipe J, Tabada, legal representative, Melody, and Pannu, Satinderpall S. Sun .
"Method of fabricating conductive electrodes on the front and backside of a thin film structure". United States. https://www.osti.gov/servlets/purl/1042627.
@article{osti_1042627,
title = {Method of fabricating conductive electrodes on the front and backside of a thin film structure},
author = {Tabada, Phillipe J and Tabada, legal representative, Melody and Pannu, Satinderpall S},
abstractNote = {A method of fabricating a thin film device having conductive front and backside electrodes or contacts. Top-side cavities are first formed on a first dielectric layer, followed by the deposition of a metal layer on the first dielectric layer to fill the cavities. Defined metal structures are etched from the metal layer to include the cavity-filled metal, followed by depositing a second dielectric layer over the metal structures. Additional levels of defined metal structures may be formed in a similar manner with vias connecting metal structures between levels. After a final dielectric layer is deposited, a top surface of a metal structure of an uppermost metal layer is exposed through the final dielectric layer to form a front-side electrode, and a bottom surface of a cavity-filled portion of a metal structure of a lowermost metal layer is also exposed through the first dielectric layer to form a back-side electrode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun May 22 00:00:00 EDT 2011},
month = {Sun May 22 00:00:00 EDT 2011}
}