Method for synthesis of high quality graphene
Abstract
A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10.sup.-6 Torr, the wafer temperature is raised to about 1500.degree. C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530.degree. C. or more, the carbon atoms self assemble themselves into graphene.
- Inventors:
-
- Piedmont, CA
- Berkeley, CA
- Albany, CA
- Beneditkbeuern, DE
- Oakland, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1039209
- Patent Number(s):
- 8142754
- Application Number:
- 13/043,329
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Lanzara, Alessandra, Schmid, Andreas K, Yu, Xiaozhu, Hwang, Choonkyu, Kohl, Annemarie, and Jozwiak, Chris M. Method for synthesis of high quality graphene. United States: N. p., 2012.
Web.
Lanzara, Alessandra, Schmid, Andreas K, Yu, Xiaozhu, Hwang, Choonkyu, Kohl, Annemarie, & Jozwiak, Chris M. Method for synthesis of high quality graphene. United States.
Lanzara, Alessandra, Schmid, Andreas K, Yu, Xiaozhu, Hwang, Choonkyu, Kohl, Annemarie, and Jozwiak, Chris M. Tue .
"Method for synthesis of high quality graphene". United States. https://www.osti.gov/servlets/purl/1039209.
@article{osti_1039209,
title = {Method for synthesis of high quality graphene},
author = {Lanzara, Alessandra and Schmid, Andreas K and Yu, Xiaozhu and Hwang, Choonkyu and Kohl, Annemarie and Jozwiak, Chris M},
abstractNote = {A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10.sup.-6 Torr, the wafer temperature is raised to about 1500.degree. C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530.degree. C. or more, the carbon atoms self assemble themselves into graphene.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 27 00:00:00 EDT 2012},
month = {Tue Mar 27 00:00:00 EDT 2012}
}
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