Title: Methods for forming particles from single source precursors

Abstract

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Inventors:

Fox, Robert V ^[1]; Rodriguez, Rene G ^[2]; Pak, Joshua ^[2]

---

+ Show Inventor Affiliations

1. Idaho Falls, ID
2. Pocatello, ID

Issue Date:

Tue Aug 23 00:00:00 EDT 2011

Research Org.:

Idaho National Laboratory (INL), Idaho Falls, ID (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1024113

Patent Number(s):

8003070

Application Number:

12/047,956

Assignee:

Battelle Energy Alliance, LLC (Idaho Falls, ID)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02485 - {Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02505 - {consisting of more than two layers}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02601 - {Nanoparticles
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L31/0322 - {comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/541 - CuInSe2 material PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/813 - Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
Y10S977/824 - Group II-VI nonoxide compounds, e.g. CdxMnyTe

Show less

DOE Contract Number:  

AC07-05ID14517

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE