Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition
Abstract
Barrier layers and methods for forming barrier layers on a porous layer are provided. The methods can include chemically adsorbing a plurality of first molecules on a surface of the porous layer in a chamber and forming a first layer of the first molecules on the surface of the porous layer. A plasma can then be used to react a plurality of second molecules with the first layer of first molecules to form a first layer of a barrier layer. The barrier layers can seal the pores of the porous material, function as a diffusion barrier, be conformal, and/or have a negligible impact on the overall ILD k value of the porous material.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1020251
- Patent Number(s):
- 7947579
- Application Number:
- 11/673,190
- Assignee:
- STC.UNM (Albuquerque, NM)
- Patent Classifications (CPCs):
-
A - HUMAN NECESSITIES A61 - MEDICAL OR VETERINARY SCIENCE A61K - PREPARATIONS FOR MEDICAL, DENTAL, OR TOILET PURPOSES
A - HUMAN NECESSITIES A61 - MEDICAL OR VETERINARY SCIENCE A61P - SPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Jiang, Ying-Bing, Cecchi, Joseph L, and Brinker, C Jeffrey. Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition. United States: N. p., 2011.
Web.
Jiang, Ying-Bing, Cecchi, Joseph L, & Brinker, C Jeffrey. Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition. United States.
Jiang, Ying-Bing, Cecchi, Joseph L, and Brinker, C Jeffrey. Tue .
"Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition". United States. https://www.osti.gov/servlets/purl/1020251.
@article{osti_1020251,
title = {Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition},
author = {Jiang, Ying-Bing and Cecchi, Joseph L and Brinker, C Jeffrey},
abstractNote = {Barrier layers and methods for forming barrier layers on a porous layer are provided. The methods can include chemically adsorbing a plurality of first molecules on a surface of the porous layer in a chamber and forming a first layer of the first molecules on the surface of the porous layer. A plasma can then be used to react a plurality of second molecules with the first layer of first molecules to form a first layer of a barrier layer. The barrier layers can seal the pores of the porous material, function as a diffusion barrier, be conformal, and/or have a negligible impact on the overall ILD k value of the porous material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 24 00:00:00 EDT 2011},
month = {Tue May 24 00:00:00 EDT 2011}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
journal, June 2005
- Puurunen, Riikka L.
- Journal of Applied Physics, Vol. 97, Issue 12, Article No. 121301
Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing
journal, January 2003
- Kim, H.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, Issue 6
Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition
journal, August 2006
- Jiang, Ying-Bing; Liu, Nanguo; Gerung, Henry
- Journal of the American Chemical Society, Vol. 128, Issue 34
The application of atomic layer deposition for metallization of 65 nm and beyond
journal, February 2006
- Kim, H.
- Surface and Coatings Technology, Vol. 200, Issue 10