Method of junction formation for CIGS photovoltaic devices
Abstract
Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.
- Inventors:
-
- Rocky Hill, NJ
- Issue Date:
- Research Org.:
- Energy Photovoltaics (Robbinsville, NJ)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1014055
- Patent Number(s):
- 7652209
- Application Number:
- US Patent Application 11/361,776
- Assignee:
- Energy Photovoltaics (Robbinsville, NJ)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Delahoy, Alan E. Method of junction formation for CIGS photovoltaic devices. United States: N. p., 2010.
Web.
Delahoy, Alan E. Method of junction formation for CIGS photovoltaic devices. United States.
Delahoy, Alan E. Tue .
"Method of junction formation for CIGS photovoltaic devices". United States. https://www.osti.gov/servlets/purl/1014055.
@article{osti_1014055,
title = {Method of junction formation for CIGS photovoltaic devices},
author = {Delahoy, Alan E},
abstractNote = {Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 26 00:00:00 EST 2010},
month = {Tue Jan 26 00:00:00 EST 2010}
}
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Works referenced in this record:
Advances in large area CIGS technology
conference, September 2000
- Delahoy, A.; Bruns, J.; Chen, Liangfan
- Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
The role of Cu(InGa)(SeS)/sub 2/ surface layer on a graded band-gap Cu(InGa)Se/sub 2/ thin-film solar cell prepared by two-stage method
conference, January 1996
- Kushiya, K.; Kuriyagawa, S.; Kase, T.
- Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996
Development of Cu(InGa)Se 2 Thin Film Solar Cells with Cd-Free Buffer Layers
journal, January 1996
- Konagai, M.; Ohtake, Y.; Okamoto, T.
- MRS Proceedings, Vol. 426