Highly aligned vertical GaN nanowires using submonolayer metal catalysts

Wang, George T; Li, Qiming; Creighton, J Randall

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Title: Highly aligned vertical GaN nanowires using submonolayer metal catalysts

Abstract

A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.

Inventors:

Wang, George T ^[1]; Li, Qiming ^[1]; Creighton, J Randall ^[1]

Albuquerque, NM

Issue Date:: Tue Jun 29 00:00:00 EDT 2010

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 993133

Patent Number(s):: 7745315

Application Number:: 11/866,684

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B11/12 - Vaporous components, e.g. vapour-liquid-solid-growth
C30B25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
C30B29/406 - {Gallium nitride}
C30B29/60 - characterised by shape

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/0242 - {Crystalline insulating materials}
H01L21/0254 - {Nitrides}
H01L21/02603 - {Nanowires}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02639 - {Preparation of substrate for selective deposition}
H01L21/02645 - {Seed materials}
H01L21/02653 - {Vapour-liquid-solid growth}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S977/762 - Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
Y10S977/816 - III-N based compounds, e.g. AlxGayInzN
Y10S977/891 - Vapor phase deposition

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Wang, George T, Li, Qiming, and Creighton, J Randall. Highly aligned vertical GaN nanowires using submonolayer metal catalysts.  United States: N. p., 2010. 
        Web.

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                    Wang, George T, Li, Qiming, & Creighton, J Randall. Highly aligned vertical GaN nanowires using submonolayer metal catalysts.  United States.

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                    Wang, George T, Li, Qiming, and Creighton, J Randall. Tue .  
        "Highly aligned vertical GaN nanowires using submonolayer metal catalysts".  United States.  https://www.osti.gov/servlets/purl/993133.

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@article{osti_993133,

  title        = {Highly aligned vertical GaN nanowires using submonolayer metal catalysts},

  author       = {Wang, George T and Li, Qiming and Creighton, J Randall},

  abstractNote = {A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Jun 29 00:00:00 EDT 2010},

  month        = {Tue Jun 29 00:00:00 EDT 2010}

}

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Works referenced in this record:

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors
journal, July 2006

Li, Yat; Xiang, Jie; Qian, Fang
Nano Letters, Vol. 6, Issue 7
https://doi.org/10.1021/nl060849z

Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition
journal, November 2006

Wang, George T.; Talin, A. Alec; Werder, Donald J.
Nanotechnology, Vol. 17, Issue 23
https://doi.org/10.1088/0957-4484/17/23/011

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections
journal, August 2003

Kuykendall, Tevye; Pauzauskie, Peter; Lee, Sangkwon
Nano Letters, Vol. 3, Issue 8
https://doi.org/10.1021/nl034422t

Crystallographic alignment of high-density gallium nitride nanowire arrays
journal, July 2004

Kuykendall, Tevye; Pauzauskie, Peter J.; Zhang, Yanfeng
Nature Materials, Vol. 3, Issue 8, p. 524-528
https://doi.org/10.1038/nmat1177

Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices
journal, March 2003

Zhong, Zhaohui; Qian, Fang; Wang, Deli
Nano Letters, Vol. 3, Issue 3
https://doi.org/10.1021/nl034003w

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Similar Records

Title: Highly aligned vertical GaN nanowires using submonolayer metal catalysts

Abstract

Citation Formats

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors journal, July 2006

Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition journal, November 2006

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections journal, August 2003

Crystallographic alignment of high-density gallium nitride nanowire arrays journal, July 2004

Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices journal, March 2003

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors
journal, July 2006

Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition
journal, November 2006

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections
journal, August 2003

Crystallographic alignment of high-density gallium nitride nanowire arrays
journal, July 2004

Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices
journal, March 2003