Title: Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method

Abstract

The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.

Inventors:

Bolotnikov, Aleskey E ^[1]; James, Ralph B ^[2]

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+ Show Inventor Affiliations

1. South Setauket, NY
2. Ridge, NY

Issue Date:

2010-07-20

Research Org.:

Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

993079

Patent Number(s):

7758843

Application Number:

12/416,224

Assignee:

U.S. Department of Energy (Washington, DC)

Patent Classifications (CPCs):

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C01B19/001 - {Preparation involving a liquid-liquid extraction, an adsorption or an ion-exchange}
C01B19/002 - {Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/48 - AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te}
C30B9/06 - using as solvent a component of the crystal composition

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/813 - Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
Y10S977/824 - Group II-VI nonoxide compounds, e.g. CdxMnyTe

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DOE Contract Number:  

AC02-98CH10886

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

47 OTHER INSTRUMENTATION