Global to push GA events into
skip to main content

Title: Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.
Inventors:
 [1];  [1];  [1];  [2];  [1]
  1. Los Alamos, NM
  2. Santa Fe, NM
Issue Date:
OSTI Identifier:
989007
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM) ALO
Patent Number(s):
7,608,335
Application Number:
11/001,461
Contract Number:
W-7405-ENG-36
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE