High brightness--multiple beamlets source for patterned X-ray production
Abstract
Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 .mu.m, with inter-aperture spacings of 12 .mu.m. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.
- Inventors:
-
- Hercules, CA
- Albany, CA
- Oakland, CA
- El Cerrito, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 988986
- Patent Number(s):
- 7609815
- Application Number:
- 11/757,137
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Leung, Ka-Ngo, Ji, Qing, Barletta, William A, Jiang, Ximan, and Ji, Lili. High brightness--multiple beamlets source for patterned X-ray production. United States: N. p., 2009.
Web.
Leung, Ka-Ngo, Ji, Qing, Barletta, William A, Jiang, Ximan, & Ji, Lili. High brightness--multiple beamlets source for patterned X-ray production. United States.
Leung, Ka-Ngo, Ji, Qing, Barletta, William A, Jiang, Ximan, and Ji, Lili. Tue .
"High brightness--multiple beamlets source for patterned X-ray production". United States. https://www.osti.gov/servlets/purl/988986.
@article{osti_988986,
title = {High brightness--multiple beamlets source for patterned X-ray production},
author = {Leung, Ka-Ngo and Ji, Qing and Barletta, William A and Jiang, Ximan and Ji, Lili},
abstractNote = {Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 .mu.m, with inter-aperture spacings of 12 .mu.m. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 27 00:00:00 EDT 2009},
month = {Tue Oct 27 00:00:00 EDT 2009}
}