Ultratough CVD single crystal diamond and three dimensional growth thereof
Abstract
The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.
- Inventors:
-
- Washington, DC
- Issue Date:
- Research Org.:
- California Institute of Technology (CalTech), Pasadena, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 988682
- Patent Number(s):
- 7594968
- Application Number:
- 11/222,224
- Assignee:
- Carnegie Institution of Washington (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- FG03-98NV13367
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Hemley, Russell J, Mao, Ho-kwang, and Yan, Chih-shiue. Ultratough CVD single crystal diamond and three dimensional growth thereof. United States: N. p., 2009.
Web.
Hemley, Russell J, Mao, Ho-kwang, & Yan, Chih-shiue. Ultratough CVD single crystal diamond and three dimensional growth thereof. United States.
Hemley, Russell J, Mao, Ho-kwang, and Yan, Chih-shiue. Tue .
"Ultratough CVD single crystal diamond and three dimensional growth thereof". United States. https://www.osti.gov/servlets/purl/988682.
@article{osti_988682,
title = {Ultratough CVD single crystal diamond and three dimensional growth thereof},
author = {Hemley, Russell J and Mao, Ho-kwang and Yan, Chih-shiue},
abstractNote = {The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {9}
}
Works referenced in this record:
Colour changes produced in natural brown diamonds by high-pressure, high-temperature treatment
journal, March 2000
- Collins, Alan T.; Kanda, Hisao; Kitawaki, Hiroshi
- Diamond and Related Materials, Vol. 9, Issue 2
Effect of nitrogen on the growth of diamond films
journal, July 1994
- Jin, S.; Moustakas, T. D.
- Applied Physics Letters, Vol. 65, Issue 4
Moissanite: A Window for High-Pressure Experiments
journal, October 2000
- Xu, J. -a.
- Science, Vol. 290, Issue 5492
Very high growth rate chemical vapor deposition of single-crystal diamond
journal, September 2002
- Yan, C.-s.; Vohra, Y. K.; Mao, H.-k.
- Proceedings of the National Academy of Sciences, Vol. 99, Issue 20, p. 12523-12525
Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films
journal, January 2001
- Schreck, M.; Hörmann, F.; Roll, H.
- Applied Physics Letters, Vol. 78, Issue 2
Red luminescence in phosphorous-doped chemically vapor deposited diamond
journal, July 1997
- te Nijenhuis, J.; Olsthoorn, S. M.; van Enckevort, W. J. P.
- Journal of Applied Physics, Vol. 82, Issue 1
Multiple twinning and nitrogen defect center in chemical vapor deposited homoepitaxial diamond
journal, November 1999
- Yan, Chih-Shiue; Vohra, Yogesh K.
- Diamond and Related Materials, Vol. 8, Issue 11
The coalescence of [001] diamond grains heteroepitaxially grown on (001) silicon
journal, December 1996
- Jiang, X.; Jia, C. L.
- Applied Physics Letters, Vol. 69, Issue 25
On the role of penetration twins in the morphological development of vapor-grown diamond films
journal, July 1994
- Tamor, M. A.; Everson, M. P.
- Journal of Materials Research, Vol. 9, Issue 7
Growth of {100} textured diamond films by the addition of nitrogen
journal, February 1996
- Cao, G. Z.; Schermer, J. J.; van Enckevort, W. J. P.
- Journal of Applied Physics, Vol. 79, Issue 3
Fracture of synthetic diamond
journal, September 1995
- Drory, M. D.; Dauskardt, R. H.; Kant, A.
- Journal of Applied Physics, Vol. 78, Issue 5
Optical excitation of paramagnetic nitrogen in chemical vapor deposited diamond
journal, November 1996
- Graeff, C. F. O.; Rohrer, E.; Nebel, C. E.
- Applied Physics Letters, Vol. 69, Issue 21
Nitrogen induced increase of growth rate in chemical vapor deposition of diamond
journal, February 1996
- Müller‐Sebert, W.; Wörner, E.; Fuchs, F.
- Applied Physics Letters, Vol. 68, Issue 6
Suppression of surface cracks on (111) homoepitaxial diamond through impurity limitation by oxygen addition
journal, November 1998
- Sakaguchi, Isao; Nishitani-Gamo, Mikka; Ping Loh, Kian
- Applied Physics Letters, Vol. 73, Issue 18
Oriented CVD diamond films: twin formation, structure and morphology
journal, April 1994
- Wild, C.; Kohl, R.; Herres, N.
- Diamond and Related Materials, Vol. 3, Issue 4-6
Vacancy enhanced aggregation of nitrogen in diamond
journal, May 1980
- Collins, A. T.
- Journal of Physics C: Solid State Physics, Vol. 13, Issue 14
High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
journal, September 2002
- Isberg, Jan; Hammersberg, Johan; Johansson, Erik
- Science, Vol. 297, Issue 5587, p. 1670-1672
Ultrahard polycrystalline diamond from graphite
journal, February 2003
- Irifune, Tetsuo; Kurio, Ayako; Sakamoto, Shizue
- Nature, Vol. 421, Issue 6923
Resonance Raman and photoluminescence investigations of micro-twins in homoepitaxially grown chemical vapor deposited diamond
journal, July 1997
- Vohra, Yogesh K.; Israel, Andrew; Catledge, Shane A.
- Applied Physics Letters, Vol. 71, Issue 3
Confocal Raman spectroscopic observation of hexagonal diamond formation from dissolved carbon in nickel under chemical vapor deposition conditions
journal, August 1998
- Nishitani-Gamo, Mikka; Sakaguchi, Isao; Loh, Kian Ping
- Applied Physics Letters, Vol. 73, Issue 6
High quality homoepitaxial growth of diamond films
journal, April 1993
- Vitton, Jean-Pierre; Garenne, Jean-Jacques; Truchet, Sylvie
- Diamond and Related Materials, Vol. 2, Issue 5-7
Scanning Tunneling Microscopy Studies of Temperature-Dependent Etching of Diamond (100) by Atomic Hydrogen
journal, April 2001
- Stallcup, R. E.; Perez, J. M.
- Physical Review Letters, Vol. 86, Issue 15
Vapor growth of diamond on diamond and other surfaces
journal, April 1981
- Spitsyn, B. V.; Bouilov, L. L.; Derjaguin, B. V.
- Journal of Crystal Growth, Vol. 52
The effect of oxygen in diamond deposition by microwave plasma enhanced chemical vapor deposition
journal, November 1990
- Liou, Y.; Inspektor, A.; Weimer, R.
- Journal of Materials Research, Vol. 5, Issue 11
HFCVD diamond grown with added nitrogen: film characterization and gas-phase composition studies
journal, July 1998
- Afzal, A.; Rego, C. A.; Ahmed, W.
- Diamond and Related Materials, Vol. 7, Issue 7
Diamond synthesis from gas phase in microwave plasma
journal, August 1983
- Kamo, Mutsukazu; Sato, Yoichiro; Matsumoto, Seiichiro
- Journal of Crystal Growth, Vol. 62, Issue 3