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Title: Ultratough CVD single crystal diamond and three dimensional growth thereof

Abstract

The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

Inventors:
 [1];  [1];  [1]
  1. Washington, DC
Issue Date:
Research Org.:
California Institute of Technology (CalTech), Pasadena, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
988682
Patent Number(s):
7594968
Application Number:
11/222,224
Assignee:
Carnegie Institution of Washington (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
FG03-98NV13367
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Hemley, Russell J, Mao, Ho-kwang, and Yan, Chih-shiue. Ultratough CVD single crystal diamond and three dimensional growth thereof. United States: N. p., 2009. Web.
Hemley, Russell J, Mao, Ho-kwang, & Yan, Chih-shiue. Ultratough CVD single crystal diamond and three dimensional growth thereof. United States.
Hemley, Russell J, Mao, Ho-kwang, and Yan, Chih-shiue. Tue . "Ultratough CVD single crystal diamond and three dimensional growth thereof". United States. https://www.osti.gov/servlets/purl/988682.
@article{osti_988682,
title = {Ultratough CVD single crystal diamond and three dimensional growth thereof},
author = {Hemley, Russell J and Mao, Ho-kwang and Yan, Chih-shiue},
abstractNote = {The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {9}
}

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